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相关论文: Metal-insulator transitions in systems with electr…

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We study the influence of the lattice structure, the Jahn-Teller effect and the Hund's rule coupling on a metal-insulator transition in AnC60 (A= K, Rb). The difference in lattice structure favors A3C60 (fcc) being a metal and A4C60 (bct)…

强关联电子 · 物理学 2009-10-31 J. E. Han , E. Koch , O. Gunnarsson

We investigate a two-orbital model for iron-based superconductors to elucidate the effect of interplay between electron correlation and Jahn-Teller electron-phonon coupling by using the dynamical mean-field theory combined with the exact…

强关联电子 · 物理学 2014-03-21 Takemi Yamada , Jun Ishizuka , Yoshiaki Ōno

We propose variational states for the ground state and the low-energy collective rotator excitations in negatively charged C60N- ions (N=1...5). The approach includes the linear electron-phonon coupling and the Coulomb interaction on the…

超导电性 · 物理学 2009-11-13 Samuel Wehrli , Manfred Sigrist

We investigate metal-insulator transitions in the Holstein-Hubbard model as a function of the on-site electron-electron interaction U and the electron-phonon coupling g. We use several different numerical methods to calculate the phase…

强关联电子 · 物理学 2007-05-23 W. Koller , D. Meyer , Y. Ono , A. C. Hewson

Mott-Hubbard metal-insulator transitions in $N$-fold degenerate Hubbard models are studied within the Gutzwiller approximation. For any rational filling with $x$ (integer) electrons per site it is found that metal-insulator transition…

凝聚态物理 · 物理学 2009-10-22 Jian Ping Lu

Variations in the band structures of C60-polymers are studied, when pi-conjugation conditions are changed. We look at band structures in order to discuss a metal-insulator transition, using a semi-empirical model with the…

chem-ph · 物理学 2008-02-03 Kikuo Harigaya

We consider a one-dimensional system of electrons interacting via a short-range repulsion and coupled to phonons close to the metal-insulator transition at half filling. We argue that the metal-insulator transition can be described as a…

凝聚态物理 · 物理学 2015-06-25 M. Fabrizio , C. Castellani , C. Di Castro

Using exact diagonalzation techniques, we study a model of interacting electrons and phonons. The spectral width of the phonons is found to be reduced as the Coulomb interaction U is increased. For a system with two modes per site, we find…

强关联电子 · 物理学 2009-10-31 J. E. Han , O. Gunnarsson

We show that the metal to insulator transition, whether generated by decreasing the electron density or by increasing the spin alignment, is determined by a universal functional form of the two-electron correlation function g(r). This…

强关联电子 · 物理学 2007-05-23 J. S. Thakur , D. Neilson

Strong electronic correlations are often associated with the proximity of a Mott insulating state. In recent years however, it has become increasingly clear that the Hund's rule coupling (intra-atomic exchange) is responsible for strong…

强关联电子 · 物理学 2013-03-20 Antoine Georges , Luca de' Medici , Jernej Mravlje

We recently developed an approach for calculation of the electron-phonon (electron-ion in a more general case) coupling in materials based on tight-binding molecular dynamics simulations. In the present work we utilize this approach to…

材料科学 · 物理学 2023-02-17 Nikita Medvedev , Igor Milov

We study the Hubbard-Holstein model, which includes both the electron-electron and electron-phonon interactions characterized by $U$ and $g$, respectively, employing the dynamical mean-field theory combined with Wilson's numerical…

强关联电子 · 物理学 2009-11-10 Gun Sang Jeon , Tae-Ho Park , Jung Hoon Han , Hyun C. Lee , Han-Yong Choi

We investigate the metal-insulator transition of the one-dimensional SU(N) Hubbard model for repulsive interaction. Using the bosonization approach a Mott transition in the charge sector at half-filling (k_F=\pi/Na_0) is conjectured for N >…

强关联电子 · 物理学 2009-10-31 Roland Assaraf , Patrick Azaria , Michel Caffarel , Philippe Lecheminant

Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in…

介观与纳米尺度物理 · 物理学 2017-03-07 Yang Lu , I-Wei Chen

The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson's numerical renormalization group for the solution of the…

强关联电子 · 物理学 2009-11-10 Thomas Pruschke , Ralf Bulla

The model of a strongly correlated system in which periodically spaced Anderson-Hubbard centers are introduced into narrow-band metal is considered. Besides the interactions between localized magnetic moments and strong on-site Coulomb…

强关联电子 · 物理学 2023-07-19 Yuriy Skorenkyy , Leonid Didukh , Oleksandr Kramar , Yuriy Dovhopyaty

The Jahn-Teller model with $E\otimes\beta$ electron-phonon coupling and local (Hubbard-like) Coulomb interaction is considered to describe a lattice system with two orbitals per site at half filling. Starting from a state with one electron…

强关联电子 · 物理学 2007-05-23 K. Ziegler

Mott metal-insulator transitions in an M-fold orbitally degenerate Hubbard model are studied by means of a generalization of the linearized dynamical mean-field theory. The method allows for an efficient and reliable determination of the…

强关联电子 · 物理学 2009-11-07 Y. Ono , M. Potthoff , R. Bulla

We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…

无序系统与神经网络 · 物理学 2015-06-24 George Kastrinakis

Roles of Coulomb interaction, orbital degeneracy and Jahn-Teller coupling in double-exchange models are examined for Mn perovskite oxides. We study the undoped Mott insulator as well as metal-insulator transitions by hole doping, and…

强关联电子 · 物理学 2009-10-31 Yukitoshi Motome , Masatoshi Imada
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