相关论文: 2D GaSe-Based Single-Pixel Spectrometer via Electr…

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an…

Wavelength-dependent polarization state of light carries crucial information about light-matter interactions. However, its measurement is limited to bulky, energy-consuming devices, which prohibits many modern, portable applications. Here,…

Scalable quantum photonic technologies require low-loss integration of many identical single-photon sources with photonic circuitry on a chip. Relatively complex quantum photonic circuits have already been demonstrated; however, sources…

A simplified digital spectrometer for the study of $\gamma$-rays with energies up to $\sim100$ MeV is presented and tested. The spectrometer is only consisted of a fast digital oscilloscope and three scintillation detectors which can work…

Silicon single-photon detectors (SPDs) are the key devices for detecting single photons in the visible wavelength range. Here we present high detection efficiency silicon SPDs dedicated to the generation of multiphoton entanglement based on…

We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si…

Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain…

The Schottky barrier height (SBH) is mapped with nanoscale resolution at pure Au/Si(001) and mixed Au/Ag/Si(001) interfaces utilizing ballistic electron emission microscopy (BEEM) by acquiring and fitting spectra every 11.7 nm over a 1…

GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 \times 10^{14}$~cm$^{-2}$ 24GeV/c proton fluence. The as fabricated Ti-GaAs barrier…

The Gas Pixel Detector belongs to the very limited class of gas detectors optimized for the measurement of X-ray polarization in the emission of astrophysical sources. The choice of the mixture in which X-ray photons are absorbed and…

Gated InGaAs/InP avalanche photodiodes are the most practical device for detection of telecom single photons arriving at regular intervals.Here, we report the development of a compact single-photon detector (SPD) module measured just 8.8cm…

For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types…

By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…

We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe…

On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…

Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient…

Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized…

In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines…

The conventional high-level sensing techniques require high-fidelity images as input to extract target features, which are produced by either complex imaging hardware or high-complexity reconstruction algorithms. In this letter, we propose…