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By developing a bidirectional-pump terahertz (THz) emission spectroscopy, we reveal an anomalous Nernst effect (ANE) induced THz emission in a single ferromagnetic film. Based on the distinctive symmetry of the THz signals, ANE is…

Transport measurements on thin films of the prototypical altermagnet MnTe have reported conflicting phenomena of anomalous Hall effects (AHE), including opposite signs and thickness-independent resistivity. Here we resolve these…

材料科学 · 物理学 2026-03-13 Yufei Zhao , Saswata Mandal , Chao-Xing Liu , Binghai Yan

Noncollinear antiferromagnets have recently been attracting considerable interest partly due to recent surprising discoveries of the anomalous Hall effect (AHE) in them and partly because they have promising applications in…

材料科学 · 物理学 2019-10-22 Guang-Yu Guo , Tzu-Cheng Wang

The Berry curvature in magnetic systems is attracting interest due to the potential tunability of topological features via the magnetic structure. $f$-electrons, with their large spin-orbit coupling, abundance of non-collinear magnetic…

强关联电子 · 物理学 2020-07-29 T. Asaba , Ying Su , M. Janoschek , J. D. Thompson , S. M. Thomas , E. D. Bauer , Shi-Zeng Lin , F. Ronning

Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…

Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4 has been demonstrated to be an intrinsic magnetic…

The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of…

The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using…

材料科学 · 物理学 2009-11-11 R. Mathieu , C. U. Jung , H. Yamada , A. Asamitsu , M. Kawasaki , Y. Tokura

The tunability of anomalous Hall and Nernst conductivities is investigated in the compensated ferrimagnet Mn$_3$Al under isotropic strain ($\eta$) and chemical potential variation using first-principles calculations. At a chemical potential…

材料科学 · 物理学 2026-02-05 Guihyun Han , Minkyu Park , S. H. Rhim

Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform…

Using first-principles calculations we investigate the intrinsic origins of the anomalous Hall effect (AHE) and the anomalous Nernst effect (ANE) in antiperovskite ferrimagnet Mn4N. We predict that the AHE is significantly enhanced under…

材料科学 · 物理学 2023-04-07 Temuujin Bayaraa , Vsevolod Ivanov , Liang Z. Tan , Sinéad M. Griffin

Historically, the genesis of anomalous Hall effect (AHE) in magnetic materials has always been a fascinating yet controversial topic in the solid state physics community. Recent progress on the understanding of this topic has revealed an…

强关联电子 · 物理学 2021-11-29 Durgesh Singh , Jadupati Nag , Sankararao Yadam , V. Ganesan , Aftab Alam , K. G. Suresh

The anomalous Nernst effect (ANE) is one of the most intriguing thermoelectric phenomena which has attracted growing interest both for its underlying physics and potential applications. Typically, a large ANE response is observed in magnets…

材料科学 · 物理学 2023-01-25 Ruihao Liu , Li Cai , Teng Xu , Jiahao Liu , Yang Cheng , Wanjun Jiang

Intrinsic anomalous Nernst effect (ANE), like its Hall counterpart, is generated by Berry curvature of electrons in solids. Little is known about its response to disorder. In contrast, the link between the amplitude of the ordinary Nernst…

Anomalous Hall effect (AHE) plays important role in the rapidly developing field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic…

Achieving atomically flat and stoichiometric films of chiral antiferromagnets (AFM) with two-dimensional kagome spin lattice structures are crucial for integrating these materials in both established and emerging antiferromagnetic…

材料科学 · 物理学 2025-03-11 Indraneel Sinha , Saurav Sachin , Shreyashi Sinha , Roumita Roy , Sudipta Kanungo , Sujit Manna

Anomalous transports, including the anomalous Hall effect (AHE) and anomalous Nernst effect (ANE), are typical manifestations of time-reversal-symmetry-breaking responses in materials. In general, the two Hall states with opposite Hall…

介观与纳米尺度物理 · 物理学 2026-01-09 Dan Li , Shuaiyu Wang , Jiabin chen , Zeling Li , Chaoxi Cui , Lei Li , Lei Wang , Zhi-Ming Yu , Xiaodong Zhou , Xiao-Ping Li

Altermagnets break time-reversal symmetry, preserve the crystal translation invariance, and have a spin density with $d$-wave, $g$-wave, etc. momentum dependencies which do not contribute to the magnetization. When an $s$-wave spin-density…

The cubic Cu$_3$Au-type $X$Pt$_3$ family ($X$ = V, Cr, and Mn) is a topological semimetal characterized by anti-crossing gapped nodal lines near the Fermi level, which give rise to significant Berry curvatures and thus to the anomalous Hall…

The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films…