相关论文: Thin Film AlN Microbolometer for Very Long-Wave In…
Niobium nitride (NbN) is a useful material for fabricating detectors because of its high critical temperature and relatively high kinetic inductance. In particular, NbN can be used to fabricate nanowire detectors and mm-wave transmission…
We deposit thin titanium-nitride (TiN) and TiN/Ti/TiN multilayer films on sapphire substrates and measure the reflectance and transmittance in the wavelength range from 400 nm to 2000 nm using a spectrophotometer. The optical constants…
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long…
Continuous monitoring of voltages ranging from tens to hundreds of kV over environmental conditions, such as temperature, is of great interest in power grid applications. This is typically done via instrument transformers. These…
We present an optical setup that can be used to characterize the thicknesses of thin NbN films to screen samples for fabrication and to better model the performance of the resulting superconducting nanowire single photon detectors. The…
With thermal issues becoming a major challenge to the development of integrated circuits (ICs), high-thermal-conductivity (high-TC) materials are gaining interest from both the industry and academia, especially for high-density…
Research on microwave signal measurement techniques is risen, driven by the expanding urgent demands of wireless communication, global positioning systems, remote sensing and 6G networks. In stark contrast with traditional electronic-based…
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…
We have found that the thin film aluminum structures shaped into a chain of micron sized islands connected by narrow isthmuses, can modify their electrical and structural properties under microwave radiation. As a result, at the temperature…
Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and…
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the…
A broadband, thermally stable absorber is essential for thermophotovoltaic (TPV) systems to simultaneously convert solar and industrial waste heat into usable energy to meet growing power demands. Here, we proposed an ingenious…
We have grown superconducting TiN films by atomic layer deposition with thicknesses ranging from 6 to 89 nm. This deposition method allows us to tune the resistivity and critical temperature by controlling the film thickness. The microwave…
We demonstrate thin-film metamaterials with resonances in the mid-infrared wavelength range. Our structures are numerically modeled and experimentally characterized by reflection and angularly-resolved thermal emission spectroscopy. We…
An ultrabroad absorber based on double-ring-shaped titanium nitride (TiN) nanoresonators, which can work in high temperatures, is proposed and numerically studied. The absorber with some optimal parameters exhibits an averaged absorption of…
While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
We investigate thin film resistive thermometry based on metal-to-insulator-transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance have been calibrated versus temperature and…
We present fabrication of 570-um-thick, millimeter-sized soda-lime-silicate float glass blocks with a 1-um-thick AlN-thin-film piezoelectric transducer sandwiched between thin metallic electrodes and deposited on the top surface. The…
We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were…