相关论文: High-Mobility Indium Native Oxide Transistors via …

Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…

A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide…

We discuss the environmental instability of amorphous indium oxide (InOx)-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InOx doped with low and high…

Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the dopants in InOx semiconductors, we proposed Si to design a…

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing…

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging…

In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm, channel length (Lch) down to 40 nm, and equivalent oxide…

Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT indium oxide (In$_2$O$_3$) field-effect transistors (FETs)…

In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility ({\mu}H) exceeding 100 cm2/Vs at room temperature (RT). It is found that the deposition of top hafnium oxide…

In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of…

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound…

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate…

Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be…

Absence of an efficient technology of GaAs passivation limits the use of III-V semiconductors in modern electronics. The effect reported here can possibly lead to a solution of this long standing problem. We found that an electrically…

The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2…

Magnetic-field tuned superconductor to insulator transition was observed in a novel hybrid system of granular superconducting indium, deposited on indium oxide thin film, which exhibits global superconductivity at low magnetic fields. We…

In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO…

Thin-film transistors composed of a hydrogen-containing indium oxide active layer are promising candidates for backplane devices in next-generation flat panel displays, offering higher definition and faster operation. However, the hydrogen…

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable…