相关论文: From many valleys to many topological phases - qua…
The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($\sim$ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more…
We demonstrate a new quantum state of matter---valley-polarized quantum anomalous Hall effect in monolayer silicene. In the presence of extrinsic Rashba spin-orbit coupling and exchange field, monolayer silicene can host a quantum…
We propose a new family of the d0 orbital XY (X = K, Rb, Cs; Y = N, P, As, Sb, Bi) monolayers with abundant and novel topology and valley properties. The KN, RbN, RbP, RbAs, CsP, CsAs, and CsSb monolayers possess remarkable quantum…
We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a…
Based on first-principles calculations, we find novel valley-polarized quantum anomalous Hall (VP-QAH) phases with a large gap-0.19 eV at an appropriate buckled angle and tunable topological phase transitions driven by the spontaneous…
Quantum anomalous Hall (QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the…
The quantum anomalous Hall (QAH) effect is a topologically nontrivial phase, characterized by a non-zero Chern number defined in the bulk and chiral edge states in the boundary. Using first-principles calculations, we demonstrate the…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…
Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the…
The quantum anomalous Hall effect is a intriguing quantum state which exhibits the chiral edge states in the absence of magnetic field. While the search for quantum anomalous Hall insulators is still active, the researchers mainly search…
Topological insulators lacking time-reversal symmetry can exhibit the quantum anomalous Hall effect. Odd-layer thick MnBi$_2$Te$_4$ is a promising platform due to its intrinsic magnetic nature, however, quantization is rarely observed in…
Floquet engineering severs as a forceful technique for uncovering high Chern numbers of quantum anomalous Hall (QAH) states with feasible tunability in high-order topologically insulating plumbene, which is readily accessible for…
The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are…
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external…
Both quantum spin Hall and quantum anomalous Hall states are novel states of quantum matter with promising applications. We propose junction quantum wells comprising II-VI, III-V or IV semiconductors as a large class of new materials…
In this study, we report here on a successful growth by molecular beam epitaxy of high crystalline quality Pb$_{1-x}$Sn$_{x}$Se:Bi/Pb$_{1-y}$Eu$_{y}$Se QWs with $x = 0.25$ and $y = 0.1$, and on their magnetotransport characterization as a…
Recent experiments on pentalayer rhombohedral graphene moir\'e superlattices have observed the quantum anomalous Hall effect at moir\'e filling factor of $\nu = 1$ and various fractional values. These phenomena are attributed to a flat…
The realization of fractional Chern insulators in moir\'e materials has sparked the search for further novel phases of matter in this platform. In particular, recent works have demonstrated the possibility of realizing quantum anomalous…
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and…
Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically-doped topological insulator completed a quantum Hall trio---quantum Hall effect (QHE), quantum…