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相关论文: Fractional Chern insulator with higher Chern numbe…

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We construct a two-band lattice model whose bands can carry the Chern numbers C=0,pm1,pm2. By means of numerical exact diagonalization, we show that the most favorable situation that selects fractional Chern insulators (FCIs) is not…

强关联电子 · 物理学 2012-11-26 Adolfo G. Grushin , Titus Neupert , Claudio Chamon , Christopher Mudry

Lattice models forming bands with higher Chern number offer an intriguing possibility for new phases of matter with no analogue in continuum Landau levels. Here, we establish the existence of a number of new bulk insulating states at…

强关联电子 · 物理学 2012-11-06 Zhao Liu , Emil J. Bergholtz , Heng Fan , Andreas M. Laeuchli

The realization of fractional Chern insulators opens up the possibility of exploring fractionally charged excitations and anyonic statistics in the absence of a magnetic field. One of the central questions is whether lattice-based systems…

介观与纳米尺度物理 · 物理学 2025-12-29 Zexu Li , Wenxuan Wang , Fajie Wang , Zaizhe Zhang , Qiu Yang , Kenji Watanabe , Takashi Taniguchi , X. C. Xie , Jie Wang , Kaihui Liu , Zhida Song , Xiaobo Lu

Topological insulators and their intriguing edge states can be understood in a single-particle picture and can as such be exhaustively classified. Interactions significantly complicate this picture and can lead to entirely new insulating…

强关联电子 · 物理学 2013-09-10 Emil J. Bergholtz , Zhao Liu

We report the theoretical discovery of a systematic scheme to produce topological flat bands (TFBs) with arbitrary Chern numbers. We find that generically a multi-orbital high Chern number TFB model can be constructed by considering…

强关联电子 · 物理学 2013-01-01 Shuo Yang , Zheng-Cheng Gu , Kai Sun , S. Das Sarma

Recent discoveries of zero-field fractional Chern insulators in moir\'e materials have attracted intensive research interests. However, most current theoretical and experimental attempts focus on systems with low Chern number bands, in…

强关联电子 · 物理学 2024-08-07 Chonghao Wang , Xiaoyang Shen , Ruiping Guo , Chong Wang , Wenhui Duan , Yong Xu

Fractional Chern insulators (FCIs) in ideal flat bands with Chern number $C$ are commonly understood as color-entangled states constructed from $C$ copies of the lowest Landau level. In realistic moir\'e systems, however, the band geometry…

介观与纳米尺度物理 · 物理学 2025-11-25 Moru Song , Kai Chang

The Hofstadter model is a popular choice for theorists investigating the fractional quantum Hall effect on lattices, due to its simplicity, infinite selection of topological flat bands, and increasing applicability to real materials. In…

强关联电子 · 物理学 2021-09-09 Bartholomew Andrews , Titus Neupert , Gunnar Möller

Most fractional quantum Hall states have been traditionally identified within a single energy band, such as the lowest Landau level or topological flat band. As more particles are introduced, they inevitably populate higher energy bands.…

强关联电子 · 物理学 2026-01-21 Licheng Wang , Dong-Hao Guan , Ai-Lei He , Shun-Li Yu , Yuan Zhou

The integer quantum Hall state occurs when the Landau levels are fully occupied by the fermions, while the fractional quantum Hall state usually emerges when the Landau level is partially filled by the strongly correlated fermions or…

强关联电子 · 物理学 2021-09-22 Wei-Wei Luo , Ai-Lei He , Yi-Fei Wang , Yuan Zhou , Chang-De Gong

We discuss the low-energy limit of three-orbital Kondo-lattice and Hubbard models describing $t_{2g}$ orbitals on a triangular lattice near half-filling. We analyze how very flat bands with non-trivial topological character, a Chern number…

强关联电子 · 物理学 2015-03-20 Stefanos Kourtis , Jörn W. F. Venderbos , Maria Daghofer

We present a pedagogical review of the physics of fractional Chern insulators with a particular focus on the connection to the fractional quantum Hall effect. While the latter conventionally arises in semiconductor heterostructures at low…

强关联电子 · 物理学 2015-10-05 S. A. Parameswaran , R. Roy , S. L. Sondhi

A large number of recent works point to the emergence of intriguing analogs of fractional quantum Hall states in lattice models due to effective interactions in nearly flat bands with Chern number C=1. Here, we provide an intuitive and…

强关联电子 · 物理学 2013-01-01 Maximilian Trescher , Emil J. Bergholtz

A flat band with Chern number $C=0$, and well isolated from the rest of Hilbert space by a gap much larger than interaction strength, is a context that has not been regarded as relevant for fractional quantum Hall physics. In this work, we…

介观与纳米尺度物理 · 物理学 2025-12-24 Zuzhang Lin , Hongyu Lu , Wenqi Yang , Dawei Zhai , Wang Yao

We study two models for spinless fermions featuring topologically non-trivial bands characterized by Chern numbers $C=\pm1$ at fractional filling. Using exact diagonalization, we show that, even for infinitely strong nearest-neighbor…

强关联电子 · 物理学 2014-04-02 Stefanos Kourtis , Titus Neupert , Claudio Chamon , Christopher Mudry

We show that bilayer graphene in the presence of a 2D superlattice potential provides a highly tunable setup that can realize a variety of flat band phenomena. We focus on two regimes: (i) topological flat bands with non-zero Chern numbers,…

介观与纳米尺度物理 · 物理学 2023-06-16 Sayed Ali Akbar Ghorashi , Aaron Dunbrack , Ahmed Abouelkomsan , Jiacheng Sun , Xu Du , Jennifer Cano

We propose models of twisted multilayer graphene that exhibit exactly flat Bloch bands with arbitrary Chern numbers and ideal band geometries. The models are constructed by twisting two sheets of Bernal-stacked multiple graphene layers with…

介观与纳米尺度物理 · 物理学 2023-12-19 Jie Wang , Zhao Liu

Fractional Chern insulators (FCIs) -- the lattice analog of fractional quantum Hall states -- form as fractionalized quasiparticles emerge in a partially-filled Chern band. This fractionalization is driven by the interplay of electronic…

The synthetic Floquet lattice, generated by multiple strong drives with mutually incommensurate frequencies, provides a powerful platform for the quantum simulation of topological phenomena. In this study, we propose a 4-band tight-binding…

量子物理 · 物理学 2024-08-27 Lingxiao Lei , Weichen Wang , Guangyao Huang , Shun Hu , Xi Cao , Xinfang Zhang , Mingtang Deng , Pingxing Chen

Bernal-stacked bilayer graphene modulated by a superlattice potential is a highly tunable system predicted to realize isolated topological flat bands. In this work we calculate the band structure and quantum geometry of bilayer graphene…

介观与纳米尺度物理 · 物理学 2025-05-12 Dathan Ault-McCoy , M. Nabil Y. Lhachemi , Aaron Dunbrack , Sayed Ali Akbar Ghorashi , Jennifer Cano
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