相关论文: Valley-dependent electronic properties in two-dime…
Altermagnetism has surfaced as a novel magnetic phase, bridging the properties of ferro- and anti-ferromagnetism. The momentum-dependent spin-splitting observed in these materials reflects their unique symmetry characteristics, which also…
Altermagnets are an emerging class of collinear antiferromagnets that exhibit unconventional spin-polarised electronic bands, potentially unlocking new functionalities that do not rely on spin-orbit coupling (SOC). Experimental signatures…
The discovery of archetypal two-dimensional (2D) materials provides enormous opportunities in both fundamental breakthroughs and device applications, as evident by the research booming in graphene, atomically thin transition-metal…
While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…
2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral…
Magnetized ferromagnetic disks or wires support strong inhomogeneous fields in their borders. Such magnetic fields create an effective potential, due to Zeeman and diamagnetic contributions, that can localize charge carriers. For the case…
Low-energy coherent transport and Goos-H\"{a}nchen (GH) lateral shift of valley electrons in planar heterojunctions composed of normal MoS$_2$ and ferromagnetic WS$_2$ monolayers are theoretically investigated. Two types of heterojunctions…
We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material…
To date, a number of valley materials have been discovered with the spin-valley or valley-layer couplings. It is highly desirable to realize the interplay of more electronic degrees of freedom in a valley material. Based on the…
The successful fabrication of one monolayer FeSe on SrTiO$_{3}$ represented a real breakthrough in searching for high-T$_{c}$ Fe-based superconductors (Ref. 1). Motivated by this important discovery, we studied the effects of tensile strain…
We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct…
We present a density functional theory study of the carrier-density and strain dependence of magnetic order in two-dimensional (2D) MAX$_3$ (M= V, Cr, Mn, Fe, Co, Ni; A= Si, Ge, Sn, and X= S, Se, Te) transition metal trichalcogenides. Our…
The development of altermagnets is fundamentally important for advancing spintronic device technology, but remains unpractical for the weak spin splitting in most cases, especially in two-dimensional materials. Based on spin group symmetry…
We use ab initio calculations and theoretical analysis to investigate the influence of in-plane strain field on valley drifts and Berry curvatures in the monolayer MoSi$_2$N$_4$, a prototypical septuple atomic layered two-dimensional…
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
The altermagnetism can achieve spin-split bands in collinear symmetry-compensated antiferromagnets. Here, we predict altermagnetic order in Janus monolayer $\mathrm{Cr_2SO}$ with eliminated inversion symmetry, which can realize the…
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and…
Topological and valleytronic materials are promising for spintronic and quantum applications due to their unique properties. Using first principles calculations, we demonstrate that germanene (Ge)-based ferromagnetic heterostructures can…
Two-dimensional (2D) magnetism, particularly 2D altermagnetism (AM), has attracted considerable interest due to its exceptional physical properties and broad application potential. However, the classification of AM undergoes a fundamental…
Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…