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相关论文: Valley-dependent electronic properties in two-dime…

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Layered van-der-Waals materials with hexagonal symmetry offer an extra degree of freedom to their electrons, the so called valley index or valley pseudospin. This quantity behaves conceptually like the electron spin and the term…

Altermagnets represent a promising class of magnetic materials owing to their distinctive spin-split band structures in the absence of net magnetization. Here, we present a first-principles investigation of altermagnetism in magnetically…

材料科学 · 物理学 2026-01-07 Ezra Day-Roberts , Huan Wu , Onur Erten , A. S Botana

Modern electronic devices heavily rely on the accurate control of charge and spin of electrons. The emergence of controllable valley degree of freedom brings new possibilities and presents a promising prospect towards valleytronics.…

Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic…

The family of monolayer two-dimensional (2D) materials hosts a wide range of interesting phenomena, including superconductivity, charge density waves, topological states and ferromagnetism, but direct evidence for antiferromagnetism in the…

材料科学 · 物理学 2021-10-12 Zhuoliang Ni , A. V. Haglund , H. Wang , B. Xu , C. Bernhard , D. G. Mandrus , X. Qian , E. J. Mele , C. L. Kane , Liang Wu

Group-IV monochalcogenides are a family of two-dimensional puckered materials with an orthorhombic structure that is comprised of polar layers. In this article, we use first principles calculations to show the multistability of monolayer…

材料科学 · 物理学 2016-08-12 Paul Z. Hanakata , Alexandra Carvalho , David K. Campbell , Harold S. Park

In this work, we predict the emergence of the valley Edelstein Effect (VEE), which is an electric-field-induced spin polarization effect, in gated monolayer transition metal dichalcogenides (MTMDs). We found an unconventional…

介观与纳米尺度物理 · 物理学 2018-08-01 Katsuhisa Taguchi , Benjamin T. Zhou , Yuki Kawaguchi , Yukio Tanaka , K. T. Law

We study the anomalous Hall effect in monolayers of transition-metal dichalcogenides 2H-$MX_2$ ($M$=Mo, W, and $X$=S, Se, Te) under a proximity effect of ferromagnetic substrate. If a proximity-induced exchange field is introduced, the…

介观与纳米尺度物理 · 物理学 2017-08-10 Tetsuro Habe , Mikito Koshino

Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on…

介观与纳米尺度物理 · 物理学 2020-12-18 Tae-Young Jeong , Soungmin Bae , Seong-Yeon Lee , Suyong Jung , Yong-Hoon Kim , Ki-Ju Yee

Altermagnets constitute a novel, third fundamental class of collinear magnetic ordered materials, alongside with ferro- and antiferromagnets. They share with conventional antiferromagnets the feature of a vanishing net magnetization. At the…

We identify a previously unrecognized class of two-dimensional (2D) collinear magnetic phase that extends beyond the established categories of ferromagnets, antiferromagnets, and altermagnets. These type IV 2D collinear magnets exhibit…

介观与纳米尺度物理 · 物理学 2025-07-25 Ling Bai , Run-Wu Zhang , Wanxiang Feng , Yugui Yao

We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…

材料科学 · 物理学 2016-02-03 Jisook Hong , Changhoon Lee , Jin-Seong Park , Ji Hoon Shim

Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely, its charge and spin. The exploration of novel electronic degrees of freedom has important implications in both basic quantum physics…

材料科学 · 物理学 2013-03-12 Xiao Li , Ting Cao , Qian Niu , Junren Shi , Ji Feng

Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for…

Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures…

介观与纳米尺度物理 · 物理学 2023-11-14 Chumki Nayak , Suvadip Masanta , Sukanya Ghosh , Shubhadip Moulick , Atindra Nath Pal , Indrani Bose , Achintya Singha

The antiferromagnetic (AFM) materials are distinguished by zero net magnetic moment, high resistance to external magnetic disturbances, and ultrafast dynamic responses. For advancing AFM materials in spintronic and valleytronic…

材料科学 · 物理学 2025-01-23 Ankita Phutela , Saswata Bhattacharya

Altermagnetism is a recently identified class of magnetic order characterized by unconventional momentum-dependent spin splitting in the absence of net magnetization, and understanding its electronic and magnetic properties is essential for…

强关联电子 · 物理学 2026-05-20 Shuyi Li , Adrian Bahri , Chunjing Jia

Employing first-principles based calculations, we reexamined the high-pressure phases of the vacancy-ordered iron-selenides, i.e. A2Fe4Se5 phase. A magnetic transition from the block-spin antiferromagnetic phase to Neel-AM phase is observed…

材料科学 · 物理学 2025-07-11 Zilong Li , Xin Ma , Siqi Wu , H. -Q. Yuan , Jianhui Dai , Chao Cao

Altermagnets, recently identified as a third class of collinear magnetic materials, have attracted significant attention in condensed matter physics. Despite this growing interest, the realization of real Chern insulators in intrinsic…

材料科学 · 物理学 2025-12-19 Yong-Kun Wang , Shifeng Qian , An-Dong Fan , Si Li

The generation and control of spin- and valley-polarization in antiferromagnets (AFMs) have garnered increasing attention due to their potential for enabling faster and more stable multifunctional spintronic and valleytronic memory and…

介观与纳米尺度物理 · 物理学 2025-07-08 Jiaqi Feng , Xiaodong Zhou , Jingyan Chen , Meiling Xu , Xiuxian Yang , Yinwei Li