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相关论文: Anomalous Eigenstates of a Doped Hole in the Ising…

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The fate of an injected hole in a Mott antiferromagnet is an outstanding issue of strongly correlated physics. It provides important insights into doped Mott insulators closely related to high-temperature superconductivity in cuprates.…

强关联电子 · 物理学 2013-11-22 Zheng Zhu , Hong-Chen Jiang , Yang Qi , Chu-Shun Tian , Zheng-Yu Weng

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

We investigate the anomalous metal arising by hole doping the Mott insulating state of the periodic Anderson model. Using Dynamical Mean-Field Theory we show that, as opposed to the electron-doped case, in the hole-doped regime the…

强关联电子 · 物理学 2015-06-03 A. Amaricci , L. de Medici , G. Sordi , M. J. Rozenberg , M. Capone

A long-standing issue in the physics of strongly correlated electronic systems is whether the motion of a single hole in quantum antiferromagnets can be understood in terms of the quasiparticle picture. Very recently, investigations of this…

强关联电子 · 物理学 2012-05-25 Zheng Zhu , Hong-Chen Jiang , Yang Qi , Chu-Shun Tian , Zheng-Yu Weng

We consider the problem of the doped Ising antiferromagnet on the frustrated triangular lattice in the limit where the hole kinetic energy is much smaller than the Ising exchange. For a {\it single} hole we prove a ``frustrated Nagaoka…

强关联电子 · 物理学 2016-08-31 R. Moessner , S. L. Sondhi

Photo-doping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts hole-like and electron-like particles. We study the dynamics of this state up to long times, as it passes its kinetic…

强关联电子 · 物理学 2021-05-26 Nagamalleswararao Dasari , Jiajun Li , Philipp Werner , Martin Eckstein

We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Z. Y. Weng

Based on an effective model of a doped antiferromagnetic Mott insulator, we show that a doped hole will induce a dipole-like spin configuration in a spin ordered phase at low doping. The kinetic energy of doped holes is severely frustrated…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Zheng-Yu Weng

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

强关联电子 · 物理学 2015-08-20 Masanori Kohno

We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different…

强关联电子 · 物理学 2007-05-23 Tiago C. Ribeiro

The low-energy charge excitations of a doped antiferromagnetic ladder are modeled by a system of interacting spinless fermions that live on the same ladder. A relatively large spin gap is assumed to ``freeze out'' all spin fluctuations. We…

强关联电子 · 物理学 2016-08-31 J. P. Rodriguez

We investigate an experimental toy-model system of a pseudospin-half square-lattice Hubbard Hamiltonian in [(SrIrO3)1/(CaTiO3)1] to include both nontrivial complex hopping and moderate electronic correlation. While the former induces…

A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder.…

Whether a doped hole propagates as a Bloch wave or not is an important issue of doped Mott physics. Here we examine this problem based on the quasiparticle spectral weight $Z$ distribution, calculated by density matrix renormalization group…

强关联电子 · 物理学 2018-07-25 Zheng Zhu , D. N. Sheng , Zheng-Yu Weng

As discussed in several chapters of this volume, frustration leads to unconventional (insulating) ground states. On the other hand, doped holes are known to have profound effects in Mott insulators. Therefore doped frustrated systems offer…

强关联电子 · 物理学 2009-11-13 Didier Poilblanc , Hirokazu Tsunetsugu

Strong local interaction in systems with non-trivial topological bands can stabilize quantum states such as magnetic topological insulators. We investigate the influence of the lattice symmetry on the possible emergence of antiferromagnetic…

强关联电子 · 物理学 2021-04-09 Morad Ebrahimkhas , Mohsen Hafez-Torbati , Walter Hofstetter

Recent experimental discoveries have brought a diverse set of broken symmetry states to the center stage of research on cuprate superconductors. Here, we focus on a thematic understanding of the diverse phenomenology by exploring a…

强关联电子 · 物理学 2014-12-02 Mark H. Fischer , Si Wu , Michael Lawler , Arun Paramekanti , Eun-Ah Kim

We demonstrate that the sign structure of the t-J model on a hypercubic lattice is entirely different from that of a Fermi gas, by inspecting the high temperature expansion of the partition function up to all orders, as well as the…

强关联电子 · 物理学 2009-09-30 K. Wu , Z. Y. Weng , J. Zaanen

We develop a "self-avoiding walks" approximation and use it to calculate the spectral function of a single hole introduced into the 2D square lattice Ising antiferromagnet. The obtained local spectral function qualitatively agrees with the…

强关联电子 · 物理学 2021-01-19 Piotr Wrzosek , Krzysztof Wohlfeld

We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum…

强关联电子 · 物理学 2018-10-22 Wayne Zheng , Zheng Zhu , D. N. Sheng , Zheng-Yu Weng
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