相关论文: An Atomistically Informed Device Engineering (AIDE…

Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO\_2) enabled its discovery and spawned numerous studies of its unique electronic properties. The combination of…

Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($\beta$-GaS), a hexagonal…

We study the charge induced in a Thomas-Fermi metal by an ion in vacuum, using an atomistic description employed in constant-potential molecular dynamics simulations, and compare the results with the predictions from continuum…

The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical techniques but…

In this work, we present the study of an atomic layer deposition (ALD) of zirconium by means of a quantum computation on an emulator representing the features of an architecture based on qubits implemented on carbon nanotubes. ALD process…

One well-known argument about one dimensional(1D) system is that 1D phase transition at finite temperature cannot exist, despite this concept depends on conditions such as range of interaction, external fields and periodicity. Therefore 1D…

The coherence of quantum dot qubits fabricated in semiconductors is often limited by charge noise from defects in gate dielectrics, which are material- and process-dependent. Characterizing these defects is an important step towards…

We present an exact ansatz for the eigenstate problem of mixed fermion-boson systems that can be implemented on quantum devices. Based on a generalization of the electronic contracted Schr\"odinger equation (CSE), our approach guides a…

The emergence of new nanoscale technologies has imposed significant challenges to designing reliable electronic systems in radiation environments. A few types of radiation like Total Ionizing Dose (TID) effects often cause permanent damages…

Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness.…

We study the energy level structures of the defective graphane lattice, where a carbon dimer defect is created by removing the hydrogen atoms on two nearest-neighbor carbon sites. Robust defect states emerge inside the bulk insulating gap…

A combined experimental and numerical study on the variation of the elastic properties of defective single-crystal diamond is presented for the first time, by comparing nano-indentation measurements on MeV-ion-implanted samples with…

Guiding and manipulating GHz frequency acoustic waves in $\mu$m-scale waveguides and resonators opens up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling…

Measurements of jet yields in heavy-ion collisions can be used to constrain jet energy loss models, and in turn provide information about the physical properties of deconfined QCD matter. ALICE reconstructs charged particle jets…

We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting transport measurements, but providing…

In this paper, we report on the method of nondestructive quality control that can be used in fabrication of GaAs high-speed electronics. The method relies on the surface potential mapping and enables rigid in vivo analysis of transport…

With the technology of artificial defects creating, we can tune the band structure and transport properties of many two-dimensional (2D) layered materials. One prototype materials system is the antidoted graphene sheet, where periodical…

In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work,…

We present a new formulation of the correlated electron-ion dynamics (CEID) scheme, which systematically improves Ehrenfest dynamics by including quantum fluctuations around the mean-field atomic trajectories. We show that the method can…

Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of…