相关论文: Unraveling Quantum Size-Dependent Optoelectrical P…
A theoretical model using electron-phonon scattering rate equations is developed for assessing carrier thermalization under steady-state conditions in two-dimensional systems. The model is applied to investigate the hot carrier effect in…
Hot carrier solar cells aim to overcome the theoretical limit of single-junction photovoltaic devices by suppressing the thermalization of hot carriers and extracting them through energy selective contacts. Designing efficient hot carrier…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
The use of low-dimensional structures such as quantum wells, wires or dots in the absorbing regions of solar cells strongly affects the spectral response of the latter, the spectral properties being drastically modified by quantum…
Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the…
We observed different temperature-dependent behaviors of steady and transient emission properties in dry-etched InGaN/GaN multiple-quantum-well (MQW) nanorods and the parent MQWs. To clarify the impacts of nanofabrication on the emission…
A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier…
Solar cells employing quantum wells can enhance the light absorption but suffer from the difficulty in photogenerated carrier extraction. Here, we analyzed the spectral response and the photocarrier collection mechanism of p-i-n multiple…
Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot…
The growth-diection quantization of confined electron gas in a GaAs/AlGaAs based quantum well structure is obtained in the Kohn-Sham iterative computational scheme. The longitudinal conductance at low temperatures, in the presence of…
Photoluminescence measurements on high-quality InGaN quantum wells reveal that carriers diffuse laterally to long distances at room temperature, up to tens of microns. This behavior, which shows a pronounced dependence on the excitation…
Under continuous-wave laser excitation in an InGaAs multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm excitation compared with 980 nm excitation, as the injected carrier…
Quantum shape effect appears under the size-invariant shape transformations of strongly confined structures. Such a transformation distinctively influences the thermodynamic properties of confined particles. Due to their characteristic…
Quantum confinement is recognized to be an inherent property in low-dimensional structures. Traditionally it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels. However, our previous…
The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is…
Hot carrier effect, a phenomenon where charge carriers generated by photon absorption remain energetic by not losing much energy, has been one of the leading strategies in increasing solar cell efficiency. Nanostructuring offers an…
InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process…
The photocurrent and the small-signal photoconductance of InGaN/GaN multiple-quantum-well structures were studied at the temperature range from 10 to 300 K. The optical excitation was carried out at the quantum wells intrinsic absorption…
Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. The results for cases of 2-QW (2 Quantum Wells) and 3-QW structures…
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron…