相关论文: Electrical Characterization of hexagonal SiGe
A series of nine samples of \sigma-Fe_{100-x}Mo_x with 44<x<57 were synthesized by a sintering method. The samples were investigated experimentally and theoretically. Using X-ray diffraction techniques structural parameters such as lattice…
In the archetypal monolayer semiconductor WSe$_2$, the distinct ordering of spin-polarized valleys (low-energy pockets) in the conduction band allows for studies of not only simple neutral excitons and charged excitons (i.e., trions), but…
Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to…
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…
We report density-functional-theory calculations of the electronic band structures and optical absorption spectra of two-dimensional crystals of Ga$_2$X$_2$ (X=S, Se, and Te). Our calculations show that all three two-dimensional materials…
Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy. Submonolayer films were semiconducting and the onset of…
Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in…
Characteristics improvement of photon/plasmon detectors have been the subject of several investigations in the area of plasmonic integrated circuits. Among different suggestions, Silicon-based Metal-Semiconductor-Metal (MSM) waveguides are…
Recent advancements in the generation of mid-infrared and terahertz laser pulses have enabled us to observe strong-field driven non-perturbative high-harmonic generation (HHG) from semiconductors, dielectrics, and semimetals. HHG has added…
We reproduce the electronic properties of FeSe in the high-temperature phase within an ab initio framework that includes screened Fock exchange and local dynamical correlations. We robustly capture the experimental band structure, as long…
Recent experiments on the silicon terminated $3\times 2$ SiC(100) surface indicated an unexpected metallic character upon hydrogen adsorption. This effect was attributed to the bonding of hydrogen to a row of Si atoms and to the…
Strongly correlated electrons at the verge of quantum criticality give rise to unconventional phases of matter and behaviors, with the discovery of new quantum critical materials driving synergistic advances in both experiments and theory.…
Employing the invariant embedding principle for the electron backscattering function, we present a scheme for constructing an electron surface scattering kernel to be used in the boundary condition for the electron Boltzmann equation of a…
Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may…
A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a…
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for…
Based on first-principles calculations of structure optimization, phonon modes and finite temperature molecular dynamics, we predict that silicon and germanium have stable, two-dimensional, low-buckled, honeycomb structures. Similar to…
We report the first observation of substitutional silicon atoms in single-layer hexagonal boron nitride (h-BN) using aberration corrected scanning transmission electron microscopy (STEM). The medium angle annular dark field (MAADF) images…
Here, we present a theoretical study in the context of photovoltaic (PV) and thermoelectric (TE) applications of ScAgC. The electronic, optical, and thermoelectric properties have been investigated systematically using density functional…
There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at…