相关论文: Quantum spin Hall effects in van der Waals materia…
We investigate the spin Hall effect (SHE) in a van der Waals (vdW) ferromagnet Fe$_{5}$GeTe$_{2}$ (FGT) with a Curie temperature $T_{\rm C}$ of 310 K utilizing the spin-torque ferromagnetic resonance method. In synchronization with the…
The quantum spin Hall (QSH) effect is the property of a new state of matter which preserves time-reversal, has an energy gap in the bulk, but has topologically robust gapless states at the edge. Recently, it has been shown that HgTe quantum…
The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is…
Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically-doped topological insulator completed a quantum Hall trio---quantum Hall effect (QHE), quantum…
Physical phenomena driven by topological properties, such as the quantum Hall effect, have the appealing feature to be robust with respect to external perturbations. Lately, a new class of materials has emerged manifesting their topological…
Controlling magnetism in low dimensional materials is essential for designing devices that have feature sizes comparable to several critical length scales that exploit functional spin textures, allowing the realization of low-power…
Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state…
The recent discovery of robust quantum anomalous Hall (QAH) effect in rhombohedral multilayer graphene (RMG) aligned with hexagonal boron nitride (hBN) has established a highly versatile platform for correlated topological matter. This…
Quantum spin Hall (QSH) insulator with large gap is highly desirable for potential spintronics application. Here we realize electrically tunable QSH insulator with large gap in van der Waals heterobilayer of monolayer transition metal…
Integer and fractional quantum anomalous Hall (QAH) effects have been widely seen in moir\'e systems. Recently there is even observation of a time reversal invariant fractional quantum spin hall (FQSH) state at filling $n=3$ in twisted…
Quantum spin Hall (QSH) systems hold promises of low-power-consuming spintronic devices, yet their practical applications are extremely impeded by the small energy gaps. Fabricating QSH materials with large gaps, especially under the…
Quantum anomalous Hall effect (QAHE) is a fundamental transport phenomenon in the field of condensed-matter physics. Without external magnetic field, spontaneous magnetization combined with spin-orbit coupling give rise to a quantized Hall…
In this work, we predict a hinged quantum spin-Hall (HQSH) effect featured by a pair of helical hinge modes in antiferromagnetic (AFM) topological insulator (TI) multilayers. This pair of helical hinge modes are localized on the hinges of…
Quantum anomalous Hall (QAH) phase is a two-dimensional bulk ferromagnetic insulator with a nonzero Chern number in presence of spin-orbit coupling (SOC) but absence of applied magnetic fields. Associated metallic chiral edge states host…
Quantum spin Hall (QSH) insulators, a new class of quantum matters, can support topologically protected helical edge modes inside bulk insulating gap, which can lead to dissipationless transport. A major obstacle to reach wide application…
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer…
We used density functional theory to investigate the lateral heteromonolayers of WTe2 and MoTe2. We confirmed that topologically nontrivial and trivial phases are energetically favored for the WTe2 and MoTe2 monolayers, taken out of bulk…
Twisted vdW quantum materials have emerged as a rapidly developing field of 2D semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the…
We demonstrate the formation of orbital and spin Hall effects (OHE/SHE) in the 1T phase of non-magnetic transition metal dichalcogenides. With the aid of density functional theory calculations and model Hamiltonian studies on MX$_2$ (M =…
We consider the anomalous, spin, valley, and valley spin Hall effects in a pristine ex-so-tic graphene-based van-der-Waals (vdW) heterostructure consisting of a bilayer graphene (BLG) between semiconducting van-der-Waals material with…