相关论文: Coherent EUV scatterometry of 2D periodic structur…
Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production…
Dynamic scattering and imaging with coherent, ultrafast, extreme ultraviolet (EUV) light sources can resolve charge, phonon and spin processes on their intrinsic length and time scales. However, full field coherent diffraction imaging…
Microscopy with extreme ultraviolet (EUV) radiation holds promise for high-resolution imaging with excellent material contrast, due to the short wavelength and numerous element-specific absorption edges available in this spectral range. At…
Increasing miniaturization and complexity of nanostructures require innovative metrology solutions with high throughput that can assess complex 3D structures in a non-destructive manner. EUV scatterometry is investigated for the…
We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results…
Lamellar gratings are widely used diffractive optical elements; gratings etched into Si can be used as structural elements or prototypes of structural elements in integrated electronic circuits. For the control of the lithographic…
Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next-generation metrology solutions in the semiconductor industry, as it can image wafer samples in reflection geometry at the…
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between…
Next-generation nano and quantum devices have increasingly complex 3D structure. As the dimensions of these devices shrink to the nanoscale, their performance is often governed by interface quality or precise chemical or dopant composition.…
Extreme ultraviolet (EUV) lithography is the cornerstone of the fabrication of advanced integrated circuits at the 7-nm node and beyond, but its reliance on multi-element reflective projection optics makes it inaccessible for small-scale…
Device architectures and dimensions are now at an unimaginable level not thought possible even 10 years ago. The continued downscaling, following the so-called Moore's law, has motivated the development and use of extreme ultraviolet (EUV)…
Table-top extreme ultraviolet (EUV) microscopy offers unique opportunities for label-free investigation of biological samples. Here, we demonstrate ptychographic EUV imaging of two dried, unstained model specimens: germlings of a fungus…
The Extreme ultraviolet SpectroPhotometer (ESP) is one of five channels of the Extreme ultraviolet Variability Experiment (EVE) onboard the NASA Solar Dynamics Observatory (SDO). The ESP channel design is based on a highly stable…
Consider a ultraviolet (UV) scattering communication system where the position of the transmitter is fixed and the receiver can move around on the ground. To obtain the link gain effectively and economically, we propose an algorithm based…
A custom, flat field, extreme ultraviolet EUV spectrometer built specifically for use with low power light sources that operate under ultrahigh vacuum conditions is reported. The spectral range of the spectrometer extends from 4 nm to 40…
We demonstrate high resolution extreme ultraviolet (EUV) coherent diffractive imaging in the most general reflection geometry by combining ptychography with tilted plane correction. This method makes it possible to image extended surfaces…
We present an optical metrology system for characterization of topography of micro/nano-structures on a surface or embedded in a semi-transparent material. Based on the principles of scatterometry, where the intensity of scattered light is…
Scatterometry is a tested method for measuring periodic semiconductor structures. Since the sizes of modern semiconductor structures have reached the nanoscale regime, the challenge is to determine the shape of periodic nanostructures with…
Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA)…
Development of experimental techniques for characterization of magnetic properties at high spatial resolution is essential for progress in miniaturization of magnetic devices, for example, in data storage media. Inelastic scattering of…