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相关论文: Highly Hydrogenated Monolayer Graphene with Wide B…

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The stability of hydrogenated monolayer graphene was investigated via X-ray photoemission spectroscopy (XPS) for two different environmental conditions: ultra-high vacuum (UHV) and ambient pressure. The study is carried out by measuring the…

Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or…

The electronic structure and structural evolution of hydrogenated graphene are investigated by Raman spectroscopy with multiple excitations. The excitation energy dependent saturation effect on the ratio of integrated intensities of D and G…

材料科学 · 物理学 2010-12-06 Zhiqiang Luo , Ting Yu , Zhenhua Ni , Sanhua Lim , Jingzhi Shang , Hailong Hu , Lei Liu , Zexiang Shen , Jianyi Lin

Hydrogenation has proven to be an effective tool to open the bandgap of graphene. In the present density functional study we demonstrate that single-side-hydrogenated graphene is a semiconductor with an indirect bandgap of 1.89 eV, in…

材料科学 · 物理学 2011-03-01 Bhalchandra S. Pujari , Sergey Gusarov , Michael Brett , Andriy Kovalenko

We report on the evolution of tritium-induced sp$^3$-defects in monolayer graphene on a Si/SiO$_2$ substrate, by comparing large-area Raman maps of the same two samples, acquired just after fabrication and twice thereafter, about 9-12…

材料科学 · 物理学 2026-01-28 Genrich Zeller , Magnus Schlösser , Helmut H. Telle

Understanding the phenomenon of intense photoluminescence in carbon materials such as hydrogenated graphene, graphene nanoribbons, etc. is at the forefront of investigations. In this study, six different types of hydrogenated graphene (phG)…

化学物理 · 物理学 2018-05-31 Volker Strauss , Ricarda A. Schäfer , Frank Hauke , Andreas Hirsch , Dirk M. Guldi

We measure the adsorption height of hydrogen-intercalated quasi-free-standing monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full…

Electronic band structures in hydrogenated graphene are theoretically investigated by means of first-principle calculations and an effective tight-binding model. It is shown that regularly designed hydrogenation to graphene gives rise to a…

介观与纳米尺度物理 · 物理学 2024-08-05 Yong-Cheng Jiang , Toshikaze Kariyado , Xiao Hu

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is…

We present several applications of the layered electron gas model to electron energy loss spectroscopy of free-standing films consisting of $N$ graphene layers in a scanning transmission electron microscope. Using a two-fluid model for the…

介观与纳米尺度物理 · 物理学 2011-10-17 V. Borka Jovanović , I. Radović , D. Borka , Z. L. Mišković

We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong…

We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp3 C-H functionality on the basal plane of graphene,…

Density functional calculations are employed to study the molecular dissociation of hydrogen on graphene, the diffusion of chemisorbed atomic species, and the electronic properties of the resulting hydrogen on graphene system. Our results…

材料科学 · 物理学 2011-06-03 Hayley McKay , David J. Wales , S. J. Jenkins , J. A. Verges , P. L. de Andres

Monolayer graphene aligned with hexagonal boron nitride (hBN) develops a gap at the charge neutrality point (CNP). This gap has previously been extensively studied by electrical transport through thermal activation measurements. Here, we…

介观与纳米尺度物理 · 物理学 2021-04-12 Tianyi Han , Jixiang Yang , Qihang Zhang , Lei Wang , Kenji Watanabe , Takashi Taniguchi , Paul L. McEuen , Long Ju

We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated…

材料科学 · 物理学 2011-10-03 F. Speck , J. Jobst , F. Fromm , M. Ostler , D. Waldmann , M. Hundhausen , H. B. Weber , Th. Seyller

We demonstrate that it is possible to mechanically exfoliate graphene under ultra high vacuum conditions on the atomically well defined surface of single crystalline silicon. The flakes are several hundred nanometers in lateral size and…

材料科学 · 物理学 2015-06-05 O. Ochedowski , G. Begall , N. Scheuschner , M. El Kharrazi , J. Maultzsch , M. Schleberger

In this paper we study the excitation spectrum of single- and multi-layer graphene beyond the Dirac cone approximation. The dynamical polarizability of graphene is computed using a full $\pi$-band tight-binding model, considering the…

介观与纳米尺度物理 · 物理学 2011-07-29 Shengjun Yuan , Rafael Roldán , Mikhail I. Katsnelson

We investigate the electronic band structure of graphene on a series of two-dimensional magnetic transition-metal phosphorus trichalcogenide monolayers, MPX$_3$ with M={Mn,Fe,Ni,Co} and X={S,Se}, with first-principles calculations. A…

介观与纳米尺度物理 · 物理学 2022-07-22 Klaus Zollner , Jaroslav Fabian

Monolayer graphene epitaxially grown on SiC(0001) was etched by H-plasma and studied by scanning tunneling microscopy and spectroscopy. The etching created partly hexagonal nanopits of monatomic depth as well as elevated regions with a…

介观与纳米尺度物理 · 物理学 2019-07-24 André E. B. Amend , Tomohiro Matsui , Hiroki Hibino , Hiroshi Fukuyama

We have developed a novel method for crystalline hydrogenation of graphene on the nanoscale. Molecular hydrogen was physisorbed at 5 K onto pristine graphene islands grown on Cu(111) in ultrahigh vacuum. Field emission local to the tip of a…

介观与纳米尺度物理 · 物理学 2017-06-06 S. J. Tjung , S. M. Hollen , G. A. Gambrel , N. M. Santagata , E. Johnston-Halperin , J. A. Gupta
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