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We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only…

介观与纳米尺度物理 · 物理学 2013-02-18 Dongwei Xu , Haiwen Liu , Vincent Sacksteder , Juntao Song , Hua Jiang , Qing-feng Sun , X. C. Xie

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding…

Two-dimensional systems with flat bands support correlated phases such as superconductivity and charge fractionalization. While twisted moire systems like twisted bilayer graphene have revealed such states, they remain complex to control.…

介观与纳米尺度物理 · 物理学 2025-07-02 Elias Andrade , Alejandro Jimeno-Pozo , Pierre A. Pantaleon , Francisco Guinea , Gerardo G. Naumis

The intrinsic resistance peak (ridge) structures were recently found to appear in the carrier density dependence plot of the resistance of the AB-stacked multilayer graphene with even numbers of layers.The ridges are due to topological…

介观与纳米尺度物理 · 物理学 2020-01-29 Tomoaki Nakasuga , Taiki Hirahara , Kota Horii , Ryoya Ebisuoka , Shingo Tajima , Kenji Watanabe , Takashi Taniguchi , Ryuta Yagi

In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as a flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with a small lattice…

Heterostructures made of stacked 2D materials with different electronic properties are studied for their potential in creating multifunctional devices. Graphene (G) and hexagonal boron nitride (h-BN) van der Waals (vdW) systems have been…

材料科学 · 物理学 2023-03-16 D. P. de Andrade Deus , J. M. J. Lopes , Roberto H. Miwa

In binary compound 2D insulators/semiconductors such as hexagonal boron nitride (hBN), the different electron affinities of atoms can give rise to out-of-plane electric polarizations across inversion asymmetric van der Waals interface of…

介观与纳米尺度物理 · 物理学 2023-09-04 Hongyi Yu , Ziheng Zhou , Wang Yao

We report the first observation of controlled, strain-induced square moire patterns in stacked graphene. By selectively displacing native wrinkles, we drive a reversible transition from the usual trigonal to square moire order. Scanning…

Persistent electrical polarized states are fundamentally important to the electric industry as they can be used in the non-volatile memory, the artificial neuromorphic network, and negative capacitors, making ultralow energy consumption…

介观与纳米尺度物理 · 物理学 2020-01-10 Chengcheng Xiao , Zhu-An Xu , Xin Luo , Yunhao Lu

Vertical ferroelectricity where a net dipole moment appears as a result of in-plane ionic displacements has gained enormous attention following its discovery in transition metal dichalcogenides. Based on first-principles calculations, we…

材料科学 · 物理学 2021-10-29 Xiaonan Ma , Chang Liu , Wei Ren , Sergey A. Nikolaev

We investigate the interplay of in-plane magnetic and transverse electric fields in AB-stacked bilayer graphene. In prior work, we demonstrated that this configuration induces an insulator-metal (IM) transition with large impact on the…

介观与纳米尺度物理 · 物理学 2026-03-27 Amarnath Chakraborty , Aleksandr Rodin , Shaffique Adam , Giovanni Vignale

Few-layer graphene systems come in various stacking orders. Considering tight-binding models for electrons on stacked honeycomb layers, this gives rise to a variety of low-energy band structures near the charge neutrality point. Depending…

强关联电子 · 物理学 2012-11-07 Michael M. Scherer , Stefan Uebelacker , Daniel D. Scherer , Carsten Honerkamp

The non-interacting energy spectrum of graphene and its bilayer counterpart consists of multiple degeneracies owing to the inherent spin, valley and layer symmetries. Interactions among charge carriers are expected to spontaneously break…

介观与纳米尺度物理 · 物理学 2015-05-20 R. Thomas Weitz , Monica T. Allen , Benjamin E. Feldman , Jens Martin , Amir Yacoby

When two BN layers are stacked in parallel in an AB or BA arrangement, a spontaneous out-of-plane electric polarization arises due to charge transfer in the out-of-plane B-N bonds. The ferroelectric switching from AB to BA (or BA to AB) can…

$\alpha$-graphyne is a two-dimensional sheet of $sp$-$sp^2$ hybridized carbon atoms in a honeycomb lattice. While the geometrical structure is similar to that of graphene, the hybridized triple bonds give rise to electronic structure that…

材料科学 · 物理学 2017-08-04 Hyeondeok Shin , Jeongnim Kim , Hoonkyung Lee , Olle Heinonen , Anouar Benali , Yongkyung Kwon

Moir\'e materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene…

Ferroelectric HfO$_2$ has emerged as a highly promising material for high-density nonvolatile memory and nanoscale transistor applications. However, the uncertain origin of polarization in HfO$_2$ limits our ability to fully understand and…

材料科学 · 物理学 2026-03-11 Seongjoo Jung , Turan Birol

While the exponential decay of tunneling probability with barrier thickness is well known, the accompanying oscillations with thickness have been comparatively less explored. Using a tight binding model, we investigate an AB-stacked bilayer…

介观与纳米尺度物理 · 物理学 2025-07-11 Ryo Tamura

The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that…

介观与纳米尺度物理 · 物理学 2020-11-30 Maksym V. Strikha , Anna N. Morozovska , Zhanna G. Zemska

The folding of monolayer graphene leads to new layered systems, termed twisted bilayer graphene (TBG), generally displaying a certain interlayer rotation away from crystallographic alignment. We here present an atomic force microscopy study…

材料科学 · 物理学 2016-08-30 Johannes C. Rode , Christopher Belke , Hennrik Schmidt , Rolf J. Haug