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相关论文: Gate-tunable band-edge in few-layer MoS$_2$

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Molybdenum disulfide (MoS$_2$) has attracted interest owing to its strain-tuned electronic and optical properties, making it a promising candidate for applications in strain engineering devices. In this study, we investigate the effect of…

材料科学 · 物理学 2024-01-26 A. Setiawan , I. P. Handayani , E. Suprayoga

Transition metal dichalcogenides (TMDs) exist in various crystal structures with semiconducting, semi-metallic, and metallic properties. The dynamic control of these phases is of immediate interest for next generation electronics such as…

材料科学 · 物理学 2026-01-21 Dante Zakhidov , Daniel A. Rehn , Evan J. Reed , Alberto Salleo

Monolayer transition metal dichalcogenides (TMDs) offer a novel two-dimensional platform for semiconductor devices. One such application, whereby the added low dimensional crystal physics (i.e. optical spin selection rules) may prove TMDs a…

介观与纳米尺度物理 · 物理学 2020-02-05 Matthew Brooks , Guido Burkard

We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene…

介观与纳米尺度物理 · 物理学 2013-09-12 Hannu-Pekka Komsa , Arkady V. Krasheninnikov

We explore proximity-induced ferromagnetism on transition metal dichalcogenide (TMD), focusing on molybdenum ditelluride (MoTe$_{2}$) ribbons with zigzag edges, deposited on ferromagnetic europium oxide (EuO). A three-orbital tight-binding…

介观与纳米尺度物理 · 物理学 2019-02-27 Natalia Cortés , O. Ávalos-Ovando , L. Rosales , P. A. Orellana , S. E. Ulloa

The mechanical and electronic properties of transition metal dichalcogenide (TMD) monolayers corresponding to transition groups IV, VI, and X are explored under mechanical bending from first principles calculations using the strongly…

材料科学 · 物理学 2019-07-19 Niraj K. Nepal , Liping Yu , Qimin Yan , Adrienn Ruzsinszky

We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…

介观与纳米尺度物理 · 物理学 2025-07-16 Ahmed Jellal , Nadia Benlakhouy , Pablo Díaz , David Laroze

Transition-metal dichalcogenides (TMDs) are layered compounds that support many electronic phases, including various charge density waves, superconducting, and Mott insulating states. Their intercalation with magnetic ions introduces…

Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic…

A momentum balance equation is developed to investigate the magnetotransport properties in monolayer molybdenum disulphide when a strong perpendicular magnetic field and a weak in-plane electric field are applied simultaneously. At low…

介观与纳米尺度物理 · 物理学 2015-09-10 C. M. Wang , X. L. Lei

Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…

介观与纳米尺度物理 · 物理学 2021-01-15 Peiliang Zhao , Jin Yu , H. Zhong , Malt. Rosner , Mikhail I. Katsnelson , Shengjun Yuan

Superconductors at the atomic two-dimensional (2D) limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the effects of disorders, fluctuations, and correlations in…

Twisted multilayer transition metal dichalcogenides (TMDs) are a promising platform for realizing topological exciton phases. Here we propose that twisted TMD heterotrilayers WX$_2$/MX$_2$/WX$_2$ with layer symmetry represents a realistic…

介观与纳米尺度物理 · 物理学 2025-04-15 Ze-Hong Guo , Tao Yan , Jin-Zhu Zhao , Yuan-Jun Jin , Qizhong Zhu

Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of…

介观与纳米尺度物理 · 物理学 2014-01-21 Wenjuan Zhu , Tony Low , Yi-Hsien Lee , Han Wang , Damon B. Farmer , Jing Kong , Fengnian Xia , Phaedon Avouris

Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in…

材料科学 · 物理学 2013-08-06 Cheng Gong , Hengji Zhang , Weihua Wang , Luigi Colombo , Robert M. Wallace , Kyeongjae Cho

Transition metal dichalcogenides (TMDs) are a branch of two-dimensional materials which in addition to having an easy-to-exfoliate layered structure, also host semiconducting, metallic, superconducting, and topological properties in various…

超导电性 · 物理学 2023-01-25 Suvodeep Paul , Saswata Talukdar , Ravi Shankar Singh , Surajit Saha

Transition metal dichalcogenides have attracted much attention recently due to their potential applications in spintronics and photonics as a result of the indirect to direct band gap transition and the emergence of the spin-valley coupling…

The physics of moir'e superlattices and the resulting formation of mini-bands in van der Waals materials have opened up an exciting new field in condensed matter physics. These systems exhibit a rich phase diagram of novel physical…

Twisted bilayers of two-dimensional materials, such as twisted bilayer graphene, often feature flat electronic bands that enable the observation of electron correlation effects. In this work, we study the electronic structure of twisted…

材料科学 · 物理学 2021-05-18 Valerio Vitale , Kemal Atalar , Arash A. Mostofi , Johannes Lischner

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and…

材料科学 · 物理学 2020-01-29 Maksym V. Strikha , Anatolii I. Kurchak , Anna N. Morozovska