相关论文: Observation of giant nonlinear valley Hall effect

Berry curvature hot spots in two-dimensional materials with broken inversion symmetry are responsible for the existence of transverse valley currents, which give rise to giant nonlocal dc voltages. Recent experiments in high-quality gapped…

In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the…

2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moir\'e periodicity in twisted graphene systems produces flat Chern bands. The recent observation of…

The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in…

Numerous attempts have been made so far to explore the quantum anomalous Hall effect (QAHE), but the ultralow observed temperature strongly hinders its practical applications. Hence, it is of great interest to go beyond the existing…

The observation of the magnon Hall effect (MHE) has relied solely on the challenging measurement of the thermal Hall conductivity. Here, we report a highly sensitive electrical Seebeck-contrast method for the observation of MHE in…

The transverse current (j_H) due to anomalous Hall effect (AHE) is usually assumed to be perpendicular to the magnetization (m) in ferromagnetic materials, which governs the experiments in spintronics. Generally, this assumption is derived…

Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…

The recently discovered nonlinear Hall (NLH) effect arises either without external magnetic field (type-I) or with an in-plane magnetic field (type-II). In this work we propose a new type of geometrical nonlinear Hall effect with an…

We study the nonlinear Hall effect in superconductors without magnetic fields induced by a quantum geometric phase (i.e., the Aharonov-Bohm phase) carried by single or pair particles. We find that the second-order nonlinear Hall…

The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic…

Symmetry is a cornerstone of condensed matter physics, fundamentally shaping the behavior of electronic systems and inducing the emergence of novel phenomena. The Hall effect, a key concept in this field, demonstrates how symmetry breaking,…

The quantum valley Hall effect (QVHE) is characterized by the valley Chern number (VCN) in a way that one-dimensional (1D) chiral metallic states are guaranteed to appear at the domain walls (DW) between two domains with opposite VCN for a…

The ordinary Hall effect refers to generation of a transverse voltage upon exertion of an electric field in the presence of an out-of-plane magnetic field. While a linear Hall effect is commonly observed in systems with breaking…

In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an…

Valley Hall effect has been observed in asymmetric single-layer and bilayer graphene systems. In single-layer graphene systems, asymmetry is introduced by aligning graphene with hexagonal boron nitride (hBN) with a near-zero twist angle,…

We report on the observation of the linear anomalous Hall effect (AHE) in the nonmagnetic Weyl semimetal TaIrTe4. This is achieved by applying a direct current Idc and an alternating current Iac (Iac<<Idc) in TaIrTe4, where the former…

The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…

The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling…

Recent experimental and theoretical studies have revealed the emergence of a linear layer Hall effect (LHE) induced by hidden Berry curvature in \textrm{MnBi}$_{2}$\textrm{Te}$_{4}$ thin films. This phenomenon underscores the layer degree…