相关论文: Hole Spin in Direct Bandgap Germanium-Tin Quantum …
Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer.…
Planar germanium heterostructures are promising hosts for hybrid quantum devices due to their compatibility with superconductors, low material disorder, and relaxed fabrication constraints. Also, the potentially low density of nuclear spins…
Unlike cubic GeSn, which requires a high Sn concentration to undergo an indirect-to-direct bandgap transition, lonsdaleite (2H) germanium is an intrinsic direct-gap semiconductor. We employ first-principles density functional theory to…
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…
Planar semiconductor heterostructures offer versatile device designs and are promising candidates for scalable quantum computing. Notably, heterostructures based on strained germanium have been extensively studied in recent years, with…
The pseudospin of heavy-holes (HHs) confined in a semiconductor quantum dot (QD) represents a promising candidate for a fast and robust qubit. While hole spin manipulation by a classical electric field utilizing the Dresselhaus spin-orbit…
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…
A heavy hole confined to an InGaAs quantum dot promises the union of a stable spin and optical coherence to form a near perfect, high-bandwidth spin-photon interface. Despite theoretical predictions and encouraging preliminary measurements,…
Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum…
Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain…
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit…
Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than…
Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as front-runners for future hole-based quantum processors. Here, we present strong coupling between a hole charge qubit, defined in a double quantum dot…
We theoretically investigate hole spins confined in a gate-defined quantum dot (QD) embedded in GeSn/Ge/GeSn quantum well (QW) structure. Owing to the tensile strain in the Ge layer, the system effectively realizes a light-hole qubit. We…
Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long…
Hole spin qubits hosted in Germanium quantum dots are promising candidates for scalable quantum computing. The strong spin-orbit interaction can enable fast and all-electrical quantum control. Furthermore, the platform can implement…
Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled…
Free standing InP quantum dots have previously been theoretically and experimentally shown to have a direct band gap across a large range of experimentally accessible sizes. We demonstrate that when these dots are embedded coherently within…
We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To…
Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing, but entangling spin qubits over micrometer distances remains a critical challenge. Current prototypical architectures maximize transversal…