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With the example of LaInO$_{3}$/BaSnO$_3$, we demonstrate how both density and distribution of a two-dimensional electron gas (2DEG) formed at the interface between these perovskite oxides, can be efficiently controlled by a ferroelectric…

材料科学 · 物理学 2022-01-17 Le Fang , Wahib Aggoune , Wei Ren , Claudia Draxl

An anomalous distortion is often observed in the transfer characteristics of graphene field-effect transistors. We fabricate graphene transistors with ferromagnetic metal electrodes, which reproducibly display distorted transfer…

材料科学 · 物理学 2010-06-30 Ryo Nouchi , Katsumi Tanigaki

For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride,…

We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems…

介观与纳米尺度物理 · 物理学 2016-07-14 I. Aliaj , I. Torre , V. Miseikis , E. di Gennaro , A. Sambri , A. Gamucci , C. Coletti , F. Beltram , F. M. Granozio , M. Polini , V. Pellegrini , S. Roddaro

We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (Europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene…

材料科学 · 物理学 2013-01-30 H. -X. Yang , A. Hallal , D. Terrade , X. Waintal , S. Roche , M. Chshiev

Using first-principles calculations, we estimated the impact of large applied electric E fields on the structural, dielectric, and ferroelectric properties of typical ferroelectrics. At large fields, the structural parameters change…

材料科学 · 物理学 2016-05-25 Daniel I. Bilc , Liviu Zarbo , Sorina Garabagiu , Eric Bousquet , Liliana Mitoseriu

In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have been subjected to constant voltage stress (CVS) conditions at…

材料科学 · 物理学 2011-07-26 M. Shahinur Rahman , E . K. Evangelou

Electrostatic dielectric capacitors are foundational to advance the electronics and electric power devices due to their ultrafast charging/discharging capability and high-power density. However, the low energy density limits the potential…

We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for…

介观与纳米尺度物理 · 物理学 2019-05-22 Ying Liu , T. S. Abhilash , Antti Laitinen , Zhenbing Tan , Guan-jun Liu , Pertti Hakonen

Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moir\'e superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of…

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures…

介观与纳米尺度物理 · 物理学 2024-06-25 Gabriele Pasquale , Zhe Sun , Kenji Watanabe , Takashi Taniguchi , Andras Kis

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…

In this work, we have studied the effects from increasing the strength of the applied electric field on the charge transport of hydrogenated graphitic fibers. Resistivity measurements were carried out for direct currents in the nA - mA…

材料科学 · 物理学 2020-05-19 Nadina Gheorghiu , Charles R. Ebbing , Timothy J. Haugan

The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or…

Ferromagnetism is most common in transition metal compounds but may also arise in low-density two-dimensional electron systems, with signatures observed in silicon, III-V semiconductor systems, and graphene moir\'e heterostructures. Here we…

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the…

介观与纳米尺度物理 · 物理学 2012-09-25 Alina Veligura , Paul J. Zomer , Ivan J. Vera-Marun , Csaba Józsa , Pavlo I. Gordiichuk , Bart J. van Wees

We show that when the pseudomagnetic fields created by long wavelength deformations are appropriately coupled with a scalar electric potential, a significant energy gap can emerge due to the formation of a Haldane state. Ramifications of…

介观与纳米尺度物理 · 物理学 2011-05-31 T. Low , F. Guinea , M. I. Katsnelson

Following a change of temperature of a pyroelectric (PE), a depolarizing electric field appears both inside the PE, as well as outside its edges, the edge depolarizing electric field (EDEF). The EDEF extends outwards up to a distance of the…

其他凝聚态物理 · 物理学 2009-11-11 V. Sandomirsky , Y. Schlesinger , R. Levin

The emerging interest in two-dimensional electron gases (2DEGs), formed at interfaces between two insulating oxide perovskites poses crucial fundamental question in view of future electronic devices. In the framework of density-functional…

材料科学 · 物理学 2022-03-09 Le Fang , Wahib Aggoune , Wei Ren , Claudia Draxl

We investigated proximity-induced superconductivity in a graphene-insulating InO bilayer system through gate-controlled transport measurements. Distinct oscillations in the differential conductance are observed across both the electron and…

超导电性 · 物理学 2025-04-08 Yuxiao Wu , Udit Khanna , Eyal Walach , Efrat Shimshoni , Aviad Frydman