相关论文: Structural and Transport Properties of Thin InAs L…

The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy…

The biaxially textured growth of superconducting Co-doped BaFe2As2 (Ba-122) thin films has been realized on ion beam assisted deposition (IBAD) MgO coated conductor templates by employing an iron buffer architecture. The iron pnictide…

We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these…

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin…

The layered nature and simple structure of FeSe reveal this iron-based superconductor as a unique building block for the design of artificial heterostructure materials. While superconductivity develops in ultrathin films of FeSe on SrTiO3…

We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTe template, fabricated by depositing it on a GaAs (111)A substrate, instead of BaF$_2$ which has been conventionally used as a substrate. By optimizing temperatures for…

Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is…

This paper reports that ~10-nm-thick FeSe thin films exhibit insulator-like behavior in terms of the temperature dependence of their electrical resistivity even though bulk FeSe has a metallic electronic structure that has been confirmed by…

High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit…

Sn1-xInxTe has been synthesized and studied recently as a candidate topological superconductor. Its superconducting critical temperature increases with Indium concentration. However, the role of Indium in altering the normal state band…

We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime…

Oxide semiconductors have emerged as common channel materials in transistors and hold promise for next-generation electronics, yet achieving high mobility typically requires costly vacuum-based techniques. Here, ultrathin (5-nm) indium…

Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on…

Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present, or not as severe for traditional superconducting materials. In this work, we explain…

InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses…

Unintentionally formed interfacial layers are ubiquitous in semiconductor devices that operate at extreme conditions. However, these layers' structure and properties often remain unknown due to the thinness of these naturally formed…

In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and…

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…

We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge modes. By using a specific sample design involving highly…