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Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to…

应用物理 · 物理学 2024-09-16 Suk Hyun Kim , Kyeong Ho Park , Young Gie Lee , Seong Jun Kang , Yongsup Park , Young Duck Kim

Defects in wide bandgap semiconductors have recently emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of emitters may pave the way to scalable on-chip devices, and therefore is highly…

Color centers hosted in hexagonal boron nitride have emerged as a highly promising platform for single-photon emission and spin-photon technologies relevant to quantum communication and quantum networking. As a wide-bandgap van der Waals…

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that has recently emerged as promising platform for quantum photonics experiments. In this work we study the formation and localization of narrowband quantum emitters in…

Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here…

材料科学 · 物理学 2016-09-28 L. J. Martínez , T. Pelini , V. Waselowski , J. R. Maze , B. Gil , G. Cassabois , V. Jacques

Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on-chip quantum photonics. The B-centre defect emitting at 436 nm is particularly compelling as it can be generated by electron…

应用物理 · 物理学 2024-04-16 Sergei Nedić , Karin Yamamura , Angus Gale , Igor Aharonovich , Milos Toth

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence…

Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature…

Development of scalable quantum photonic technologies requires on-chip integration of components such as photonic crystal cavities and waveguides with nonclassical light sources. Recently, hexagonal boron nitride (hBN) has emerged as a…

One of the most promising building blocks for the development of spin qubits, single-photon sources, and quantum sensors at room temperature, as well as 2D ultraviolet light-emitting diodes, are defect colour centres in 2D hexagonal boron…

介观与纳米尺度物理 · 物理学 2025-03-13 M. K. Prasad , V. Babenko , A. W. Tadbier , S. Hofmann , J. P. Goss , J. D. Mar

Defect centers in wide-band-gap crystals attracted considerable attention due to the realisations of qubits, sensors, or single photon emitters at room temperature. The family of these centers is constantly growing, including well-known…

介观与纳米尺度物理 · 物理学 2023-05-24 M. Grzeszczyk , K. Vaklinova , K. Watanabe , T. Taniguchi , K. S. Novoselov , M. Koperski

Applications of quantum science to computing, cryptography and imaging are on their way to becoming key next generation technologies. Owing to the high-speed transmission and exceptional noise properties of photons, quantum photonic…

Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies. Recently, hexagonal boron nitride has garnered significant attention in quantum photonic…

Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a…

Growing interest in devices based on layered van der Waals (vdW) materials is motivating the development of new nanofabrication methods. Hexagonal boron nitride (hBN) is one of the most promising materials for studies of quantum photonics…

应用物理 · 物理学 2018-09-21 Johannes E. Fröch , Yongsop Hwang , Sejeong Kim , Igor Aharonovich , Milos Toth

Color centers in hexagonal boron nitride (hBN) have recently emerged as promising candidates for a new wave of quantum applications. Thanks to hBN's high stability and 2-dimensional (2D) layered structure, color centers in hBN can serve as…

量子物理 · 物理学 2023-05-02 Sumukh Vaidya , Xingyu Gao , Saakshi Dikshit , Igor Aharonovich , Tongcang Li

Hexagonal boron nitride is an emerging two-dimensional material with far-reaching applications in fields like nanophotonics or nanomechanics. Its layered architecture plays a key role for new materials such as Van der Waals…

量子物理 · 物理学 2022-02-01 Alexander Kubanek

Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The…

The integration of van der Waals (vdW) materials into photonic devices has laid out a foundation for many new quantum and optoelectronic applications. Despite tremendous progress in the nanofabrication of photonic building blocks from vdW…

Color centers in solid state crystals have become a frequently used system for single photon generation, advancing the development of integrated photonic devices for quantum optics and quantum communication applications. In particular,…

量子物理 · 物理学 2018-06-26 Tobias Vogl , Geoff Campbell , Ben C. Buchler , Yuerui Lu , Ping Koy Lam
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