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相关论文: Superconductivity in Substitutional Ga-Hyperdoped …

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We report the doping high concentration of tetravalent Ge4+ ions (5 mol % for x = 0.05 to 30 mol % for x = 0.30) at the Fe3+ sites of Fe2-xGexO3 system by chemical coprecipitation route. The charge state of Fe and Ge ions has been modified…

材料科学 · 物理学 2023-09-08 Divya Sherin G T , R. N Bhowmik

We study theoretically the effect of the fermion and boson densities on the superconductivity transition critical temperature $(T_c)$ of a two dimensional electron gas (2DEG), where superconductivity is mediated by a Bose-Einstein…

超导电性 · 物理学 2014-10-15 E. D. Cherotchenko , T. Espinosa-Ortega , A. V. Nalitov , I. A. Shelykh , A. V. Kavokin

Recent studies have demonstrated ambient pressure superconductivity in compressively strained La$_{3}$Ni$_{2}$O$_{7}$ thin films, yet the phase diagram of heterovalent doping$-$critical for advancing the field$-$remains unexplored. Here, we…

The recent achievement of superconductivity in La$_3$Ni$_2$O$_{7-\delta}$ with transition temperatures exceeding 40 K in thin films under compressive strain and 80 K in bulk crystals under high pressure opens new avenues for research on…

超导电性 · 物理学 2026-03-30 Lifen Xiang , Siyi Lei , Xiaolin Ren , Ziao Han , Zijian Xu , X. J. Zhou , Zhihai Zhu

N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…

We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultra-high…

超导电性 · 物理学 2016-03-17 Peng Wei , Ferhat Katmis , Cui-Zu Chang , Jagadeesh S. Moodera

By substituting Fe with the 5d-transition metal Pt in BaFe2As2, we have successfully synthesized the superconductors BaFe2-xPtxAs2. The systematic evolution of the lattice constants indicates that the Fe ions were successfully replaced by…

超导电性 · 物理学 2015-05-18 Xiyu Zhu , Fei Han , Gang Mu , Jun Tang , Jing Ju , Katsumi Tanigaki , Hai-Hu Wen

$\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\rm SnH_{4}$ and $\rm GeH_{3}Cl$ for the first time. The latter is a newly introduced CVD source designed for epitaxial…

It is challenging to grow an epitaxial four-fold compound superconductor (SC) on six-fold topological insulator (TI) platform due to stringent lattice-matching requirement. Here, we demonstrate that Fe(Te,Se) can grow epitaxially on a TI…

A comprehensive first principles study on the electronic topological transition in a number of 122 family of Fe based superconductors is presented. Doping as well as temperature driven Lifshitz transitions are found from first principles…

超导电性 · 物理学 2017-02-01 Haranath Ghosh , Smritijit Sen

The iron-based superconductors (IBSs) of the recently discovered 1144 class, unlike many other IBSs, display superconductivity in their stoichiometric form and are intrinsically hole doped. The effects of chemical substitutions with…

Superconductivity in the cuprate superconductors and the Fe-based superconductors is realized by doping the parent compound with charge carriers, or by application of high pressure, to suppress the antiferromagnetic state. Such a rich phase…

In order to investigate the effects of in-plane strain on the superconductivity of FeSe, epitaxial thin films of FeSe were fabricated on CaF$_2$ substrates. The films are compressed along the a-axis and their superconducting transition…

超导电性 · 物理学 2013-10-30 Fuyuki Nabeshima , Yoshinori Imai , Masafumi Hanawa , Ichiro Tsukada , Atsutaka Maeda

A general feature of unconventional superconductors is the existence of a superconducting dome in the phase diagram as a function of carrier concentration. For the simplest iron-based superconductor FeSe (with transition temperature Tc ~ 8…

We report the realization of epitaxial indium thin films on PbTe nanowires. The film is continuous and forms an atomically sharp interface with PbTe. Tunneling devices reveal a hard superconducting gap. The gap size, 1.08 to 1.18 meV, is…

Topological insulators embody a new state of matter characterized entirely by the topological invariants of the bulk electronic structure rather than any form of spontaneously broken symmetry. Unlike the 2D quantum Hall or quantum…

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All…

In contrast to bulk FeSe superconductor, heavily electron-doped FeSe-derived superconductors show relatively high Tc without hole Fermi surfaces and nodal superconducting gap structure, which pose great challenges on pairing theories in the…

超导电性 · 物理学 2016-02-24 B. Lei , J. H. Cui , Z. J. Xiang , C. Shang , N. Z. Wang , G. J. Ye , X. G. Luo , T. Wu , Z. Sun , X. H. Chen

Significant manifestation of interplay of superconductivity and charge density wave, spin density wave or magnetism is dome-like variation in superconducting critical temperature (Tc) for cuprate, iron-based and heavy Fermion…

In this work, we report on the growth of high-mobility $\beta$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature…