相关论文: Omnidirectional shuttling to avoid valley excitati…
The problem of electron transport by means of a dumbbell shaped shuttle in strong Coulomb blockade regime is solved. The electrons may be shuttled only in the cotunneling regime during the time spans when both shoulders of the shuttle…
Superconducting quantum circuits are typically housed in conducting enclosures in order to control their electromagnetic environment. As devices grow in physical size, the electromagnetic modes of the enclosure come down in frequency and…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We study a vertical double quantum dot (DQD) in a Si/Si$_{1-x}$Ge$_x$/Si double-well heterostructure for full electrical control of electron Loss-DiVincenzo (LD) spin qubits, using realistic device modeling and numerical simulations. Due to…
Many quantum computing platforms are based on a two-dimensional physical layout. Here we explore a concept called looped pipelines which permits one to obtain many of the advantages of a 3D lattice while operating a strictly 2D device. The…
By utilizing the site-dependent spin quantization axis in semiconductor quantum dot (QD) arrays, shuttling-based spin qubit gates have become an appealing approach to realize scalable quantum computing due to the circumvention of using…
The valley degeneracy in Si qubit devices presents problems for their use in quantum information processing. It is possible to lift this degeneracy by using the Wiggle Well architecture, in which an oscillatory Ge concentration couples the…
We review recent transport experiments that reveal two-threshold voltage-current characteristics, marked by a significant increase in noise between the two threshold voltages, at low electron densities in the insulating regime in…
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated…
The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt…
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering…
Quantum links can interconnect qubit registers and are therefore essential in networked quantum computing. Semiconductor quantum dot qubits have seen significant progress in the high-fidelity operation of small qubit registers but…
We present the theory and measurement of valley splitting in a quantum point contact (QPC) in a modulation doped Si/SiGe heterostructure. Our measurements are performed on a submicron Schottky-gated device. An effective mass theory is…
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by…
We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultra-clean two-dimensional electron system in SiGe/Si/SiGe quantum wells are…
Mobile spin qubit architectures promise flexible connectivity for efficient quantum error correction and relaxed device layout constraints, but their viability rests on preserving spin coherence during transport. While shuttling transforms…
We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel…
Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…
The coupling between $z$ valleys in the conduction band of a Si quantum well arises from phenomena occurring within several atoms from the interface, thus ruling out a theoretical description based on pure effective mass theory. However,…