相关论文: Omnidirectional shuttling to avoid valley excitati…

Electronic spins in Silicon (Si) are rising contenders for qubits -- the logical unit of quantum computation-- owing to its outstanding spin coherence properties and compatibility to standard electronics. A remarkable limitation for spin…

The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin…

Quantum dots can confine single electrons or holes to define spin qubits that can be operated with high fidelity. Experimental work has progressed from linear to two-dimensional arrays of quantum dots, enabling qubit interactions that are…

Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower…

The influence of strong electron-electron interactions and Wigner-molecule (WM) formation on the spectra of $2e$ singlet-triplet double-dot Si qubits is presented based on a full configuration interaction (FCI) approach that incorporates…

We study quantum corrections to conductivity in a 2D system with a smooth random potential and strong spin-orbit splitting of the spectrum. We show that the interference correction is positive and down to the very low temperature can exceed…

We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite difference time domain (FDTD) method. The presented model is…

We propose a new two--qubit phase gate for ultra--cold atoms confined in an experimentally realized tilted double--well optical lattice [Sebby--Strabley et al., Phys. Rev. A {\bf 73} 033605 (2006)]. Such a lattice is capable of confining…

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…

Spin-valley properties in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDC) has attracted significant interest due to the possible applications in quantum computing. Spin-valley properties can be exploited in TMDC…

Semiconductor quantum dots have shown impressive breakthroughs in the last years, with single and two qubit gate fidelities matching other leading platforms and scalability still remaining a relative strength. However, due to qubit wiring…

We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor…

In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dipole, flopping mode qubits can provide faster gates with…

An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies…

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…

We study the effect of backward scatterings in the tunneling at a point contact between the edges of a second level hierarchical fractional quantum Hall states. A universal scaling dimension of the tunneling conductance is obtained only…

We propose a theoretical scheme to realize the coherent coupling of multiple atoms in a quantum network which is composed of a two-dimensional (2D) array of coupled cavities. In the scheme, the pairing off-resonant Raman transitions of…

We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as…

The exchange coupling of the spins of two electrons in double well potentials in a semiconductor background is calculated within the Heitler-London (HL) approximation. Atomic and quantum dot types of confining potentials are considered, and…

The interplay between quantum Hall ordering and spontaneously broken "internal" symmetries in two-dimensional electron systems with spin or pseudospin degrees of freedom gives rise to a variety of interesting phenomena, including novel…