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Van der Waals heterostuctures, made from stacks of two-dimensional materials, exhibit unique light-matter interactions and are promising for novel optoelectronic devices. The performance of such devices is governed by near-field coupling…

介观与纳米尺度物理 · 物理学 2018-01-23 Guillaume Froehlicher , Etienne Lorchat , Stéphane Berciaud

InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure, direct or indirect. In general, different methods can be…

Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electron in a specific K-valley in momentum space.…

介观与纳米尺度物理 · 物理学 2014-09-09 G. Wang , L. Bouet , D. Lagarde , M. Vidal , A. Balocchi , T. Amand , X. Marie , B. Urbaszek

Dielectric structures can support low-absorption optical modes, which are attractive for engineering light-matter interactions with excitonic resonances in two-dimensional (2D) materials. However, the coupling strength is often limited by…

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning…

Two-dimensional (2D) van der Waals (vdW) heterostructures (HSs) provide a versatile platform for tailoring electronic, optical, and magnetic properties via proximity effects at their interfaces. In this work, we explore the optical response…

The possibility of the appearance of a dielectric electron-hole liquid (EHL) in monolayers of transition metal dichalcogenides and heterostructures based on them is considered. It is shown that the coherent pairing of electrons and holes in…

介观与纳米尺度物理 · 物理学 2023-05-16 P. V. Ratnikov

The electronic structure of an atomic-layer-deposited MoS2 monolayer on SiO2 was investigated using X-ray absorption spectroscopy (XAS) and synchrotron X-ray photoelectron spectroscopy (XPS). The angle-dependent evolution of the XAS spectra…

Tunneling spectroscopy and its evolution are crucial for elucidating the intricate electronic structure and emergent phenomena in quantum materials.Nevertheless, high-quality measurements -- specifically those tracking evolution across…

超导电性 · 物理学 2026-05-22 Yixuan Niu , Jun Cheng , Shiji Ding , Zhongxin Guo , Shang Wang , Chenglong Li , Meining Zhang , Peng Cai

Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In…

Van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMD) are an emerging platform for opto-electronic, -spintronic and -valleytronic devices that could benefit from (i) strong light-matter interactions and…

Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and…

Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization…

Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not…

Two-dimensional excitons formed in quantum materials such as monolayer transition-metal dichalcogenides and their strong light-matter interaction have attracted unrivalled attention by the research community due to their extraordinarily…

介观与纳米尺度物理 · 物理学 2018-12-31 Lorenz Maximilian Schneider , Shanece Esdaille , Daniel Rhodes , Katayun Barmak , James Hone , Arash Rahimi-Iman

GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for their temperature-dependent photoluminescence (PL) that is…

材料科学 · 物理学 2017-10-03 Fabio Pezzoli , Anna Giorgioni , David Patchett , Maksym Myronov

High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy (MBE). The combination of angle-resolved photoemission (ARPES), scanning tunneling…

Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive…

The spectral and spatiotemporal dynamics of photoluminescence in monolayers of transition metal dichalcogenide WSe$_2$ obtained by mechanical exfoliation on a Si/SiO$_2$ substrate is studied over a wide range of temperatures and excitation…

介观与纳米尺度物理 · 物理学 2021-02-03 M. A. Akmaev , M. V. Kochiev , A. I. Duleba , M. V. Pugachev , A. Yu. Kuntsevich , V. V. Belykh

Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes…

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