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Graphene holds great promise for post-silicon electronics, however, it faces two main challenges: opening up a bandgap and finding a suitable substrate material. In principle, graphene on hexagonal boron nitride (hBN) substrate provides…

介观与纳米尺度物理 · 物理学 2011-10-27 Neerav Kharche , Saroj K. Nayak

All-dielectric nanoantennas have recently opened exciting opportunities for functional nanophotonics, owing to their strong optical resonances along with low material loss in the near-infrared range. Pushing these concepts to the visible…

Bandgap engineering in semiconductors is required for the development of photonic and optoelectronic devices with optimized absorption and emission energies. This is usually achieved by changing the chemical or structural composition during…

We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovolatic effects and the spectral response of the…

The discovery of graphene and its fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Van der Waals (vdW) layered materials as graphene, hexagonal boron nitride (hBN), transition…

应用物理 · 物理学 2022-04-07 Leonardo Viti , Miriam Serena Vitiello

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…

材料科学 · 物理学 2010-02-11 Fengnian Xia , Damon B. Farmer , Yu-ming Lin , Phaedon Avouris

High harmonic generation (HHG) opens a window on the fundamental science of strong-field light-mater interaction and serves as a key building block for attosecond optics and metrology. Resonantly enhanced HHG from hot spots in…

We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted…

介观与纳米尺度物理 · 物理学 2009-11-13 Melinda Y. Han , Barbaros Oezyilmaz , Yuanbo Zhang , Philip Kim

The design and development of new photonic devices for technological applications requires a deep understanding of the effect of structural properties on the resulting band gap size and its position. Here, we perform a theoretical study of…

光学 · 物理学 2024-05-24 Oscar D. H. Pardo , R. R. Rey-González

Graphene- the wonder material has attracted a great deal of attention from varied fields of condensed matter physics, materials science and chemistry in recent times. Its 2D atomic layer structure and unique electronic band structure makes…

材料科学 · 物理学 2011-08-23 Deep Jariwala , Anchal Srivastava , Pulickel Ajayan

Most popular atomically thin carbon material, called graphene, has got no band gap and this particular property of graphene makes it less useful from the aspect of nanoscale transistor devices. The band gap can be introduced in the graphene…

应用物理 · 物理学 2019-11-15 Pankaj Kumar

Van der Waals heterostructures formed by assembling different two-dimensional atomic crystals into stacks can lead to many new phenomena and device functionalities. In particular, graphene/boron-nitride heterostructures have emerged as a…

介观与纳米尺度物理 · 物理学 2014-07-22 Zhi-Guo Chen , Zhiwen Shi , Wei Yang , Xiaobo Lu , You Lai , Hugen Yan , Feng Wang , Guangyu Zhang , Zhiqiang Li

Graphene is an ideal 2D material system bridging electronic and photonic devices. It also breaks the fundamental speed and size limits by electronics and photonics, respectively. Graphene offers multiple functions of signal transmission,…

应用物理 · 物理学 2018-10-19 Rong Wang , Xingang Ren , Ze Yan , Lijun Jiang , Wei E. I. Sha , Guangcun Shan

Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies…

应用物理 · 物理学 2018-01-18 Yury Turkulets , Ilan Shalish

The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in different dimensions are being explored for their potential…

Bilayer graphene (BLG) possesses a finite bandgap when a potential difference is introduced between the two graphene layers. The potential difference is known to be introduced by surface charge transfer. Thus, it is expected that a finite…

材料科学 · 物理学 2014-12-04 Ryo Nouchi

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not…

介观与纳米尺度物理 · 物理学 2017-04-26 Shi-Li Yan , Zhi-Jian Xie , Jian-Hao Chen , Takashi Taniguchi , Kenji Watanabe

Recently cycloarene has been experimentally obtained in a self-assembled structure, forming graphene-like monoatomic layered systems. Here, we establish the bandgap engineering/prediction in cycloarene assemblies within a combination of…

材料科学 · 物理学 2021-06-09 F. Crasto de Lima , A. Fazzio

A series of measurements using a novel technique called electrostatic-manipulation scanning tunneling microscopy were performed on a highly-oriented pyrolytic graphite (HOPG) surface. The electrostatic interaction between the STM tip and…

介观与纳米尺度物理 · 物理学 2015-01-30 P. Xu , Y. Yang , S. D. Barber , J. K. Schoelz , D. Qi , M. L. Ackerman , L. Bellaiche , P. M. Thibado

The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…

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