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Pure Topological Insulating materials preserve a unique electronic state comprising of bulk insulating gap and conducting surface states. Here we use bulk Bi2Se3 single crystals possessing Se vacancy defects as a prototype topological…

材料科学 · 物理学 2019-08-13 Amit Jash , Kamalika Nath , T. R. Devidas , A. Bharathi , S. S. Banerjee

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of…

The bilayer Ruddlesden-Popper nickelate $\mathrm{La_3Ni_2O_7}$ has emerged as a promising platform for exploring and understanding high-temperature superconductivities. While most prior doping studies have focused on hole doping via…

超导电性 · 物理学 2026-05-29 Shi-Cong Mo , Wéi Wú

Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators.…

Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial…

With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by…

材料科学 · 物理学 2023-06-02 Rodrigo T. Paulino , Marcos A. Avila

Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, we present the atomic-scale evolution of the…

材料科学 · 物理学 2022-03-16 Wen Wan , Darshana Wickramaratne , Paul Dreher , Rishav Harsh , I. I. Mazin , Miguel M. Ugeda

Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are…

材料科学 · 物理学 2018-05-22 Giordano Mattoni , Alessio Filippetti , Nicola Manca , Pavlo Zubko , Andrea D. Caviglia

Doped films of organic small molecules are investigated with respect to their thermoelectric properties. A variety of hosts and dopants, for both n and p-doping, are compared. C$_{60}$ n-doped by Cr$_2$(hpp)$_4$ or o-MeO-DMBI-I are found to…

材料科学 · 物理学 2014-01-08 Torben Menke

We investigate the electrostatic effects in doped topological insulators by developing a self consistent scheme for an interacting tight binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic…

材料科学 · 物理学 2013-05-30 Dimitrios Galanakis , Tudor D. Stanescu

We have conducted a highly precise doping controlled experiment on a thin film of the single layer cuprate Bi2Sr2-xLaxCuOy (x = 0.6), in order to observe the superconducting insulating transition (SIT). Sr2+/La3+ substitution (x = 0.6)…

超导电性 · 物理学 2009-11-13 I Matei , Z Z Li , H Raffy

Thin films provide a versatile platform to tune electron correlations and explore new physics in strongly correlated materials. Epitaxially grown thin films of the alkali-doped fulleride K$_{3+x}$C$_{60}$, for example, exhibit %various…

强关联电子 · 物理学 2022-08-15 Changming Yue , Yusuke Nomura , Philipp Werner

The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2…

超导电性 · 物理学 2013-08-14 Yeonbae Lee , Aviad Frydman , Tianran Chen , Brian Skinner , A. M. Goldman

Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to…

Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it…

Topological insulators are insulating bulk materials hosting conducting surface states. Their magnetic doping breaks time-reversal symmetry and generates numerous interesting effects such as dissipationless transport. Nonetheless, their…

介观与纳米尺度物理 · 物理学 2019-05-15 Juba Bouaziz , Manuel dos Santos Dias , Filipe Souza Mendes Guimarães , Samir Lounis

Topological insulators are a new class of insulators with conducting surface state. Most of the topological insulators are chalcogenides, where a tiny amount of chalcogen vacancy destroys the predicted bulk insulating state and results in a…

强关联电子 · 物理学 2026-02-20 Sathishkumar M , Asha Ann Abrahama , Rajesh Kumar Sahu , Soma Banik , Soham Manni

The atomic thickness of two-dimensional (2D) materials provides a unique opportunity to control material properties and engineer new functionalities by electrostatic doping. Electrostatic doping has been demonstrated to tune the electrical…

材料科学 · 物理学 2018-08-01 Shengwei Jiang , Lizhong Li , Zefang Wang , Kin Fai Mak , Jie Shan

Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate…

To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In…