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相关论文: Learning in memristive electrical circuits

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The increasing computational demands of deep learning models pose significant challenges for edge devices. To address this, we propose a memristor-based circuit design for MobileNetV3, specifically for image classification tasks. Our design…

硬件体系结构 · 计算机科学 2025-04-04 Jiale Li , Zhihang Liu , Sean Longyu Ma , Chiu-Wing Sham , Chong Fu

Memristor has been identified as the fourth fundamental circuit element by Dr. Leon Chua in 1971 and since then it has gathered a lot of interest because of its non-volatility and are considered as a viable solution to the beyond CMOS era…

系统与控制 · 电气工程与系统科学 2024-09-06 Prashant Gupta , Priscilla Jennifer

Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…

应用物理 · 物理学 2022-04-06 Vasileios Manouras , Spyros Stathopoulos , Alex Serb , Themis Prodromakis

Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the…

无序系统与神经网络 · 物理学 2018-04-19 Taimur Ahmed , Sumeet Walia , Edwin Mayes , Rajesh Ramanathan , Vipul Bansal , Madhu Bhaskaran , Sharath Sriram , Omid Kavehei

Neural processor development is reducing our reliance on remote server access to process deep learning operations in an increasingly edge-driven world. By employing in-memory processing, parallelization techniques, and algorithm-hardware…

信号处理 · 电气工程与系统科学 2019-06-25 Jaeheum Lee , Jason K. Eshraghian , Kyoungrok Cho , Kamran Eshraghian

Time perception is essential for task switching, and in the mammalian brain appears alongside other processes. Memristors are electronic components used as synapses and as models for neurons. The d.c. response of memristors can be…

机器人学 · 计算机科学 2014-02-18 Ella Gale , Ben de Lacy Costello , Andrew Adamatzky

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…

介观与纳米尺度物理 · 物理学 2010-02-03 V. Moshnyaga , M. Esseling , L. Sudheendra , O. I. Lebedev , K. Gehrke , G. Van Tendeloo , K. Samwer

In pursuit of neuromorphic (brain-inspired) devices, memristors (memory-resistors) have emerged as effective components for emulating neuronal circuitry. Here we formally define a class of Simple Volatile Memristors (SVMs) based on a simple…

软凝聚态物质 · 物理学 2024-09-20 T. M. Kamsma , R. van Roij , C. Spitoni

Due to many limitations of Von Neumann architecture such as speed, memory bandwidth, efficiency of global interconnects and increase in the application of artificial neural network, researchers have been pushed to look into alternative…

新兴技术 · 计算机科学 2019-05-15 Harshit Roy , Mrigank Sharad

Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…

In conventional digital computers, data and information are represented in binary form and encoded in the steady states of transistors. They are then processed in a quasi-static way. However, with transistors approaching their physical…

应用物理 · 物理学 2023-05-12 Zhao Yuanxi , Duan Wenrui , Li Huanglong

We report a resistance based threshold logic family useful for mimicking brain like large variable logic functions in VLSI. A universal Boolean logic cell based on an analog resistive divider and threshold logic circuit is presented. The…

新兴技术 · 计算机科学 2013-08-03 A. P. James , L. R. V. J. Francis , D. Kumar

Traditional studies of memristive devices have mainly focused on their applications in non-volatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies { the…

新兴技术 · 计算机科学 2017-04-26 V. A. Slipko , Y. V. Pershin

In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…

介观与纳米尺度物理 · 物理学 2022-09-13 Francesco Caravelli , Ezio Iacocca , Gia-Wei Chern , Cristiano Nisoli , Clodoaldo I. L. de Araujo

The memristive crossbar array (MCA) has been successfully applied to accelerate matrix computations of signal detection in massive multiple-input multiple-output (MIMO) systems. However, the unique property of massive MIMO channel matrix…

信号处理 · 电气工程与系统科学 2025-03-24 Jia-Hui Bi , Shaoshi Yang , Ping Zhang , Sheng Chen

Crossbar architectures have long been seen as a promising foundation for in-memory computing, using memristor arrays for high-density, energy-efficient analog computation. However, this conventional architecture suffers from a fundamental…

系统与控制 · 电气工程与系统科学 2026-02-10 Tingwei Zhang , Jiahui Liu , David Allstot , Huaping Liu

Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…

应用物理 · 物理学 2025-02-06 N Vasileiadis , P Loukas , A Mavropoulis , P Normand , I Karafyllidis , G Ch Sirakoulis , P Dimitrakis

Several abilities of biological systems, such as adaptation to natural environment, or of animals to learn patterns when appropriately trained, are features that are extremely useful, if emulated by electronic circuits, in applications…

神经元与认知 · 定量生物学 2011-12-22 M. Di Ventra , Y. V. Pershin

We present a tutorial on the properties of the new ideal circuit element, a memristor. By definition, a memristor M relates the charge q and the magnetic flux $\phi$ in a circuit, and complements a resistor R, a capacitor C, and an inductor…

介观与纳米尺度物理 · 物理学 2009-05-05 Yogesh N. Joglekar , Stephen J. Wolf

Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…

神经与进化计算 · 计算机科学 2022-01-28 Ankita Paul , Shihao Song , Twisha Titirsha , Anup Das
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