相关论文: Low-Temperature Electron Transport in [110] and [1…
The new regime of low-temperature heat transfer in suspended nanowires is predicted. It takes place when (i) only ``acoustic'' phonon modes of the wire are thermally populated and (ii) phonons are subject to the effective elastic…
High bias electrical transport characteristics of freely suspended metallic single-walled carbon nanotubes (SWNTs) are investigated at 250-400K in vacuum and various gases. Self-heating is exploited to examine the temperature dependence of…
Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of…
The thermoelectric properties of 1.6 nm-thick Si square nanowires with [100] crystalline orientation are calculated over a wide temperature range from 0 K to 1000 K, taking into account atomistic electron-phonon interaction. In our model,…
The transport properties of hot holes in silicon at cryogenic temperatures exhibit several anomalous features, including the emergence of two distinct saturated drift velocity regimes and a non-monotonic trend of the current noise versus…
We study thermal transport through Pt nanowires that bridge planar contacts as a function of wire length and vibrational frequency of the contacts. When phonons in the contacts have lower average frequencies than those in the wires thermal…
Effects of resonant acoustic phonon scattering on magnetoresistivity are examined in two-dimensional electron systems at low temperatures by using a balance-equation magnetotransport scheme direct controlled by the current. The…
The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The…
This thesis is dedicated to the synthesis, characterization and the study of electrical transport through metal nanowires and nanotubes. The metal nanowires(Ni, Cu) and nanotubes(Cu) are synthesised by electrochemical deposition in…
In nanostructures phonon transport behaviour is distinctly different to transport in bulk materials such that materials with ultra low thermal conductivities and enhanced thermoelectric performance can be realized. Low thermal…
We analyze transport in metallic single-wall carbon nanotubes (SWNTs) on insulating substrates over the bias range up to electrical breakdown in air. To account for Joule self-heating, a temperature-dependent Landauer model for electrical…
We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature…
We have measured the heat conduction between 0.05 K and 1.0 K of high purity silicon wafers carrying on their polished faces a variety of thin dielectric films and polycrystalline thin metallic films. Using a Monte Carlo simulation to…
Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift…
We demonstrate the key role of phonon occupation in limiting the high-field ballistic transport in metallic carbon nanotubes. In particular, we provide a simple analytic formula for the electron transport scattering length, that we validate…
We examine the effect on the DC resistivity of small-q electron-phonon scattering, in a system with the electronic topology of the high-T_c oxides. Despite the fact that the scattering is dominantly forward, its contribution to the…
We calculate an electron-phonon scattering and intrinsic transport properties of black phosphorus monolayer using tight-binding and Boltzmann treatments as a function of temperature, carrier density, and electric field. The low-field…
Transport of electrons at high electric fields is investigated in an intrinsic three-dimensional Dirac semimetal cadmium arsenide, considering the scattering of electrons from acoustic and optical phonons. Screening and hot phonon effect…
A simulation framework that couples atomistic electronic structures to Boltzmann transport formalism is developed and applied to calculate the transport characteristics of thin silicon nanowires (NWs) up to 12nm in diameter. The…
Heat dissipation issues are the emerging challenges in the field of flexible electronics. Thermal management of flexible electronics creates a demand for flexible materials with highly anisotropic thermal conductivity, which work as heat…