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相关论文: Topological excitons in moir\'e MoTe$_2$/WSe$_2$ h…

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We develop a systematic theory for excitons subject to Fermi-Hubbard physics in moir\'e twisted transition metal dichalcogenides (TMDs). Specifically, we consider excitons in moir\'e systems for which the valence band is in the…

强关联电子 · 物理学 2023-06-07 T. -S. Huang , Yang-Zhi Chou , C. L. Baldwin , Fengcheng Wu , Mohammad Hafezi

We demonstrate a generic mechanism to realize topological flat minibands by confining massive Dirac fermions in a periodic moir\'e potential, which can be achieved in a heterobilayer of transition metal dichalcogenides. We show that the…

介观与纳米尺度物理 · 物理学 2022-10-28 Ying Su , Heqiu Li , Chuanwei Zhang , Kai Sun , Shi-Zeng Lin

Twisted bilayer transition metal dichalcogenides, such as MoTe$_2$, provide a versatile platform for exploring correlated topological phases. This work investigates the interplay of perpendicular magnetic and electric fields in tuning the…

强关联电子 · 物理学 2025-08-27 Tianhong Lu , Yi-Ming Wu , Luiz H. Santos

While transition metal dichalcogenide (TMD) based moire materials have been shown to host various correlated electronic phenomena, topological states have not been experimentally observed until now. In this work, using first principles…

强关联电子 · 物理学 2021-10-04 Yang Zhang , Trithep Devakul , Liang Fu

Twisted multilayer transition metal dichalcogenides (TMDs) are a promising platform for realizing topological exciton phases. Here we propose that twisted TMD heterotrilayers WX$_2$/MX$_2$/WX$_2$ with layer symmetry represents a realistic…

介观与纳米尺度物理 · 物理学 2025-04-15 Ze-Hong Guo , Tao Yan , Jin-Zhu Zhao , Yuan-Jun Jin , Qizhong Zhu

Moir\'e superlattices based on two-dimensional transition metal dichalcogenides (TMDs) have emerged as a highly versatile and fruitful platform for exploring correlated topological electronic phases. One of the most remarkable examples is…

介观与纳米尺度物理 · 物理学 2024-10-02 Ming Xie , Mohammad Hafezi , Sankar Das Sarma

Moir\'e patterns are common in Van der Waals heterostructures and can be used to apply periodic potentials to elementary excitations. We show that the optical absorption spectrum of transition metal dichalcogenide bilayers is profoundly…

介观与纳米尺度物理 · 物理学 2017-04-06 Fengcheng Wu , Timothy Lovorn , A. H. MacDonald

Transition metal dichalcogenide (TMD) bilayers with an interlayer twist exhibit a moire super-period, whose effects can manifest in both structural and electronic properties. Atomic displacements can lead to reconstruction into domains of…

材料科学 · 物理学 2025-10-23 Madeleine Phillips , C. Stephen Hellberg

Moir\'e transition metal dichalcogenide (TMD) materials provide an ideal playground for studying the combined interplay of strong interactions and band-topology over a range of electronic fillings. Here we investigate the panoply of…

强关联电子 · 物理学 2024-11-22 Juan Felipe Mendez-Valderrama , Sunghoon Kim , Debanjan Chowdhury

Twisted transition metal dichalcogenide (TMD) bilayers exhibit periodic moir\'e potentials, which can trap excitons at certain high-symmetry sites. At small twist angles, TMD lattices undergo an atomic reconstruction, altering the moir\'e…

介观与纳米尺度物理 · 物理学 2024-11-26 Joakim Hagel , Samuel Brem , Ermin Malic

Transition metal dichalcogenide (TMD) twisted homobilayers have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discovery of fractional Chern insulator (FCI) states in twisted…

We show that moir\'e bands of twisted homobilayers can be topologically nontrivial, and illustrate the tendency by studying valence band states in $\pm K$ valleys of twisted bilayer transition metal dichalcogenides, in particular, bilayer…

介观与纳米尺度物理 · 物理学 2019-03-06 Fengcheng Wu , Timothy Lovorn , Emanuel Tutuc , Ivar Martin , A. H. MacDonald

The moir\'e pattern observed in stacked non-commensurate crystal lattices, such as hetero-bilayers of transition metal dichalcogenides, produces a periodic modulation of their bandgap. Excitons subjected to this potential landscape exhibit…

其他凝聚态物理 · 物理学 2021-09-08 I. R. Lavor , D. R. da Costa , L. Covaci , M. V. Milošević , F. M. Peeters , A. Chaves

In bilayers of semiconducting transition metal dichalcogenides, the twist angle between layers can be used to introduce a highly regular periodic potential modulation on a length scale that is large compared to the unit cell. In such…

材料科学 · 物理学 2022-04-27 N. Götting , F. Lohof , C. Gies

Ultraflat bands in twisted bilayers of two-dimensional materials have potential to host strong correlations, including the Mott-insulating phase at half-filling of the band. Using first principles density functional theory calculations, we…

材料科学 · 物理学 2019-01-02 Mit H. Naik , Manish Jain

Moir\'e patterns of transition metal dichalcogenide (TMD) heterobilayers have proven to be an ideal platform to host unusual correlated electronic phases, emerging magnetism, and correlated exciton physics. While the existence of novel…

Semiconductor moir\'e superlattices have been shown to host a wide array of interaction-driven ground states. However, twisted homobilayers have been difficult to study in the limit of large moir\'e wavelength, where interactions are most…

Recent experimental discovery of fractional Chern insulator in moir\'e Chern band in twisted transition metal dichalocogenide homobilayers has sparked intensive interest in exploring the ways of engineering band topology and correlated…

强关联电子 · 物理学 2024-05-22 Xiaoyang Shen , Chonghao Wang , Ruiping Guo , Zhiming Xu , Wenhui Duan , Yong Xu

Topological flat bands at the Fermi level offer a promising platform to study a variety of intriguing correlated phase of matter. Here we present band engineering in the twisted orbital-active bilayers with spin-orbit coupling. The symmetry…

介观与纳米尺度物理 · 物理学 2022-09-15 Huan Wang , Yadong Jiang , Zhaochen Liu , Jing Wang

Twisted transition metal dichalcogenides (tTMDs) provide a highly tunable platform to explore the interplay between strong correlation and topology. Among them, the properties involving the charge degree of freedom have been extensively…

强关联电子 · 物理学 2025-08-25 Wei-Tao Zhou , Zhao-Yang Dong , Zhao-Long Gu , Jian-Xin Li
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