相关论文: On-Demand Growth of Semiconductor Heterostructures…
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects…
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method…
The stoichiometric "111" iron-based superconductor, LiFeAs, has attacted great research interest in recent years. For the first time, we have successfully grown LiFeAs thin film by molecular beam epitaxy (MBE) on SrTiO3(001) substrate, and…
Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains. However,…
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…
The newly developed machine learning (ML) empirical pseudopotential (EP) method overcomes the poor transferability of the traditional EP method with the help of ML techniques while preserving its formal simplicity and computational…
The optimization of the electrodes manufacturing process constitutes one of the most critical steps to ensure high-quality Lithium-Ion Battery (LIB) cells, in particular for automotive applications. Because LIB electrode manufacturing is a…
In this work we investigate the growth of $\beta$-Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) which have exhibited prohibitively low growth…
In many wireless application scenarios, acquiring labeled data can be prohibitively costly, requiring complex optimization processes or measurement campaigns. Semi-supervised learning leverages unlabeled samples to augment the available…
Purpose: To introduce a combined machine learning (ML) and physics-based image reconstruction framework that enables navigator-free, highly accelerated multishot echo planar imaging (msEPI), and demonstrate its application in…
This paper introduces a novel neural network (NN) structure referred to as an ``Auto-hybrid precoder'' (Auto-HP) and an unsupervised deep learning (DL) approach that jointly designs \ac{mmWave} probing beams and hybrid precoding matrix…
Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr$_3$PbO and…
Printed electronics have gained significant traction in recent years, presenting a viable path to integrating computing into everyday items, from disposable products to low-cost healthcare. However, the adoption of computing in these…
Two-dimensional semiconductor-superconductor heterostructures form the foundation of numerous nanoscale physical systems. However, measuring the properties of such heterostructures, and characterizing the semiconductor in-situ is…
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties…
A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum…
The rapid progress in 2D material research has triggered the growth of various quantum nanostructures-nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis…
We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale…
We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-oriented epitaxial \b{eta}-Ga2O3-films were grown on c-plane…
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and…