相关论文: ARC: DVFS-Aware Asymmetric-Retention STT-RAM Cache…
Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…
Much research has shown that applications have variable runtime cache requirements. In the context of the increasingly popular Spin-Transfer Torque RAM (STT-RAM) cache, the retention time, which defines how long the cache can retain a cache…
Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…
Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAM in on-chip caches due to several advantages. These advantages include non-volatility, low leakage, high integration density, and CMOS compatibility. Prior studies have…
Last level caches (LLCs) occupy a large chip-area and there size is expected to grow further to offset the limitations of memory bandwidth and speed. Due to high leakage consumption of SRAM device, caches designed with SRAM consume large…
Spin-Transfer Torque RAMs (STTRAMs) have been shown to offer much promise for implementing emerging cache architectures. This paper studies the viability of STTRAM caches for mobile workloads from the perspective of energy and latency.…
As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the critical loads from Last Level Cache (LLC), which are frequently repeated, has become a major concern. The processor may stall for a…
In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set capacity and associativity to use efficiently the full potential of MLC STTRAM. We exploit the…
Various constraints of Static Random Access Memory (SRAM) are leading to consider new memory technologies as candidates for building on-chip shared last-level caches (SLLCs). Spin-Transfer Torque RAM (STT-RAM) is currently postulated as the…
Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…
In this paper, we propose a novel accuracy-reconfigurable stochastic computing (ARSC) framework for dynamic reliability and power management. Different than the existing stochastic computing works, where the accuracy versus power/energy…
In this paper, we demonstrate the design of efficient and high-performance AI/Deep Learning accelerators with customized STT-MRAM and a reconfigurable core. Based on model-driven detailed design space exploration, we present the design…
Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
In modern systems, DRAM-based main memory is significantly slower than the processor. Consequently, processors spend a long time waiting to access data from main memory, making the long main memory access latency one of the most critical…
An effective way to improve energy efficiency is to throttle hardware resources to meet a certain performance target, specified as a QoS constraint, associated with all applications running on a multicore system. Prior art has proposed…
Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…
As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic…
The number of battery-powered devices is rapidly increasing due to the widespread use of IoT-enabled nodes in various fields. Energy harvesters, which help to power embedded devices, are a feasible alternative to replacing battery-powered…
In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…