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In conventional solar cell semiconductor materials (predominantly Si) photons with energy higher than the band gap initially generate hot electrons and holes, which subsequently cool down to the band edge by phonon emission. Due to the…

Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg,interpretation of the CM…

介观与纳米尺度物理 · 物理学 2021-04-20 Jun Suk Kim , Minh Dao Tran , Sung-Tae Kim , Daehan Yoo , Sang-Hyun Oh , Ji-Hee Kim , Young Hee Lee

Carrier multiplication (CM), a photo-physical process to generate multiple electron-hole pairs by exploiting excess energy of free carriers, is explored for efficient photovoltaic conversion of photons from the blue solar band,…

We address recent experiments (Science 325, 1367 (2009)) reporting on highly efficient multiplication of electron-hole pairs in carbon nanotube photodiodes at photon energies near the carrier multiplication threshold (twice the…

介观与纳米尺度物理 · 物理学 2015-05-19 Roi Baer , Eran Rabani

Engineering semiconductors to enhance carrier multiplication (CM) could lead to increased photovoltaic cell performance and a significant widening of the materials range suitable for future solar technologies. Semiconductor nanocrystals…

介观与纳米尺度物理 · 物理学 2007-08-30 Gautham Nair , Moungi G Bawendi

We report here an assessment of carrier multiplication (CM) yields in PbSe and PbS nanocrystals (NCs) by a quantitative analysis of biexciton and exciton dynamics in transient photoluminescence decays. Interest in CM, the generation of more…

材料科学 · 物理学 2009-11-13 Gautham Nair , Scott M Geyer , Liang-Yi Chang , Moungi G Bawendi

Carrier Multiplication (CM) is a Coulomb-driven non-radiative recombination mechanism which leads to the generation of multiple electron-hole pairs after absorption of a single high-energy photon. Recently a new CM process, termed space…

材料科学 · 物理学 2018-09-21 Ivan Marri , Stefano Ossicini

We report on systematic numerical study of carrier multiplication (CM) processes in spherically symmetric nanocrystal (NC) and bulk forms of PbSe and PbS representing the test bed for understanding basic aspects of CM dynamics. The adopted…

介观与纳米尺度物理 · 物理学 2015-05-30 Kirill A. Velizhanin , Andrei Piryatinski

Carrier multiplication (CM) describes a strong charge-carrier interaction process in semiconductor colloidal nanocrystals (NCs), wherein two band-edge excitons are simultaneously created by an absorbed photon with at least twice the bandgap…

光学 · 物理学 2026-04-07 Zhen Zhang , Encheng Sun , Jian Li , Chunfeng Zhang , Fengrui Hu , Min Xiao , Xiaoyong Wang

We demonstrate for the first time that impact ionization (II) [the inverse of Auger recombination (AR)] occurs with very high efficiency in semiconductor nanocrystals (NCs). Interband optical excitation of PbSe NCs at low pump intensities,…

介观与纳米尺度物理 · 物理学 2009-11-10 R. D. Schaller , V. I. Klimov

Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an…

仪器与探测器 · 物理学 2014-11-21 Jörn Lange , Julian Becker , Eckhart Fretwurst , Robert Klanner , Gunnar Lindström

Topological insulators possess completely different spin-orbit coupled bulk and surface electronic spectra that are each predicted to exhibit exotic responses to light. Here we report time-resolved fundamental and second harmonic optical…

介观与纳米尺度物理 · 物理学 2011-08-24 D. Hsieh , F. Mahmood , J. W. McIver , D. R. Gardner , Y. S. Lee , N. Gedik

The multiplication rates of hot carriers in CdSe quantum dots are quantified using an atomistic pseudopotential approach and first order perturbation theory. Both excited holes and electrons are considered, and electron-hole Coulomb…

介观与纳米尺度物理 · 物理学 2015-05-13 Zhibin Lin , Alberto Franceschetti , Mark T. Lusk

Ultrafast carrier dynamics in the topological insulator Bi2Se3 have recently been intensively studied using a variety of techniques. However, we are not aware of any successful experiments exploiting transient absorption (TA) spectroscopy…

介观与纳米尺度物理 · 物理学 2021-05-31 Yuri D. Glinka , Junzi Li , Tingchao He , Xiao Wei Sun

The conversion of light into free electron-hole pairs constitutes the key process in the fields of photodetection and photovoltaics. The efficiency of this process depends on the competition of different relaxation pathways and can be…

介观与纳米尺度物理 · 物理学 2013-04-24 K. J. Tielrooij , J. C. W. Song , S. A. Jensen , A. Centeno , A. Pesquera , A. Zurutuza Elorza , M. Bonn , L. S. Levitov , F. H. L. Koppens

Carrier multiplication is a non-radiative recombination mechanism that leads to the generation of two or more electron-hole pairs after absorption of a single photon. By reducing the occurrence of dissipative effects, this process can be…

材料科学 · 物理学 2018-09-21 Ivan Marri , Marco Govoni , Stefano Ossicini

Methods of exceeding the detailed balance limit for a single junction solar cell have included down-converting high energy photons to produce two photons; and carrier multiplication, whereby high energy photons produce more than one…

材料科学 · 物理学 2011-05-30 Z. R. Abrams , A. Niv , C. Gladden , M. Gharghi , X. Zhang

Carrier and phonon dynamics in Bi2Se3 crystals are studied by a spatially resolved ultrafast pump-probe technique. Pronounced oscillations in differential reflection are observed with two distinct frequencies, and are attributed to coherent…

介观与纳米尺度物理 · 物理学 2011-06-08 Nardeep Kumar , Brian A. Ruzicka , N. P. Butch , P. Syers , K. Kirshenbaum , J. Paglione , Hui Zhao

Carrier multiplication is a many-particle process giving rise to the generation of multiple electron-hole pairs. This process holds the potential to increase the power conversion efficiency of photovoltaic devices. In graphene, carrier…

介观与纳米尺度物理 · 物理学 2014-10-27 Florian Wendler , Andreas Knorr , Ermin Malic

We use optical pump--THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi$_2$Se$_3$ films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for…

介观与纳米尺度物理 · 物理学 2015-06-23 R. Valdés Aguilar , J. Qi , M. Brahlek , N. Bansal , A. Azad , J. Bowlan , S. Oh , A. J. Taylor , R. P. Prasankumar , D. A. Yarotski
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