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Electronic conductivity in organic materials is well-established. Both semiconductive and metallic behavior is observed in (quasi) 0-, 1-, 2- and 3-dimensional carbon-based materials and is applied in a wide range of commercial devices.…

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…

介观与纳米尺度物理 · 物理学 2014-03-25 Nan Ma , Debdeep Jena

Rapid progress in organic electronics demands new highly efficient organic semiconducting materials. Nevertheless, only few materials have been created so far that show reliable band-like transport with high charge mobilities, which…

This report reviews recent progress in computing Kubo formulas for general interacting Hamiltonians. The aim is to calculate electric and thermal magneto-conductivities in strong scattering regimes where Boltzmann equation and Hall…

强关联电子 · 物理学 2024-10-04 Assa Auerbach , Sauri Bhattacharyya

The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…

材料科学 · 物理学 2018-07-04 Igor Neri , Miquel López-Suárez

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the first few molecular layers near the dielectric interface.…

Calculating the quasiparticle (QP) band structure of two-dimensional (2D) materials within the GW self-energy approximation has proven to be a rather demanding computational task. The main reason is the strong $\mathbf{q}$-dependence of the…

材料科学 · 物理学 2016-10-12 Filip A. Rasmussen , Per S. Schmidt , Kirsten T. Winther , Kristian S. Thygesen

In this paper, we present the numerical analysis and simulations of a multi-dimensional memristive device model. Memristive devices and memtransistors based on two-dimensional (2D) materials have demonstrated promising potential for…

New materials such as nodal-line semimetals offer a unique setting for novel transport phenomena. Here, we calculate the quantum correction to conductivity in a disordered nodal-line semimetal. The torus-shaped Fermi surface and encircled…

介观与纳米尺度物理 · 物理学 2019-05-21 Wei Chen , Hai-Zhou Lu , Oded Zilberberg

The coexistence of semiconducting (2H) and metallic (1T) phases of MoS$_{2}$ monolayers have further pushed their strong potential for applications in the next generation of electronic devices based on the two-dimensional lateral…

计算物理 · 物理学 2021-12-01 Mohammad Bahmani , Mahdi Ghorbani-Asl , Thomas Frauenheim

Marrying the predictive power of ab initio calculations with many-body effects remains a challenging task in two-dimensional (2d) materials, where efficient carrier-carrier interaction challenges established approximation schemes. In…

介观与纳米尺度物理 · 物理学 2025-09-22 Alexander Steinhoff , Frank Jahnke , Matthias Florian

We present a comprehensive ab initio study of the influence of band structure corrections, particularly the electron effective mass, on the phonon-limited electron drift and Hall mobilities of GaAs. Our approach is based on the DFT+$U$…

Recently, two-dimensional boron sheets have attracted a lot of attentions owing to their structural polymorphs and outstanding properties. And, due to chemical complexity and electron deficiency of B atoms, the 2D boron sheets are easy…

材料科学 · 物理学 2016-07-29 Ruiqi Zhang , Jinlong Yang

A novel approach is presented to efficiently include transport effects in thin active material coating layers of all-solid-state batteries using a dimensionally reduced formulation embedded into a three-dimensionally resolved coupled…

化学物理 · 物理学 2023-07-06 Stephan Sinzig , Christoph P. Schmidt , Wolfgang A. Wall

The Shubnikov - de Haas effect in quasi-two-dimensional normal metals is studied. The interlayer conductivity is calculated using the Kubo formula. The electron scattering on short-range is considered in the self-consistent Born…

统计力学 · 物理学 2009-11-07 P. D. Grigoriev

In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…

统计力学 · 物理学 2007-05-23 S. F. Liotta , A. Majorana

Spin-orbit coupling (SOC) drives interesting and non-trivial phenomena in solid state physics, ranging from topological to magnetic to transport properties. Thorough study of such phenomena often require effective models where SOC term is…

材料科学 · 物理学 2024-07-09 Qiangqiang Gu , Shishir Kumar Pandey

Starting with general semiclassical equations of motion for electrons in the presence of electric and magnetic fields, we extend the Chambers formula to include in addition to a magnetic field, time-dependent electric fields and bands with…

介观与纳米尺度物理 · 物理学 2022-04-18 Emmanouil K. Kokkinis , Garry Goldstein , Dmitry Efremov , Joseph J. Betouras

Electron-defect ($e$-d) interactions govern charge carrier dynamics at low temperature, where they limit the carrier mobility and give rise to phenomena of broad relevance in condensed matter physics. Ab initio calculations of $e$-d…

材料科学 · 物理学 2020-03-19 I-Te Lu , Jin-Jian Zhou , Marco Bernardi

The recent discovery of 2D superconductivity at the interface of BaPbO$_3$ (BPO) and BaBiO$_3$ (BBO) has motivated us to study in depth the electronic and structural properties and the relation between them in this particular…

超导电性 · 物理学 2021-05-26 S. Di Napoli , C. Helman , A. M. Llois , V. Vildosola