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相关论文: Extended Metal-Insulator Crossover with Strong Ant…

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The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…

强关联电子 · 物理学 2026-02-27 Mingzhong Lu , Yu-Feng Song , Youjin Deng , Yuan-Yao He

The $2d$ Hubbard model with nearest-neighbour hopping on the square lattice and an average of one electron per site is known to undergo an extended crossover from metallic to insulating behavior driven by proliferating antiferromagnetic…

强关联电子 · 物理学 2020-03-19 Aaram J. Kim , Fedor Simkovic , Evgeny Kozik

The ground state of the Hubbard model with nearest-neighbor hopping on the square lattice at half filling is known to be that of an antiferromagnetic (AFM) band insulator for any on-site repulsion. At finite temperature, the absence of…

We study the transition from paramagnetic metal to paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model at half-filling. Working at the moderately high temperature T=0.33*t where the spin…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

We study the SU(3) symmetric Fermi-Hubbard model (FHM) in the square lattice at $1/3$-filling using numerically exact determinant quantum Monte Carlo (DQMC) and numerical linked-cluster expansion (NLCE) techniques. We present the different…

Thermodynamic and dynamical properties of filling-control metal-insulator transition (MIT) in the Hubbard model are studied by the operator projection method, especially in two dimensions. This is a non-perturbative analytic approach to…

强关联电子 · 物理学 2009-11-07 Shigeki Onoda , Masatoshi Imada

We study the asymmetric Hubbard model at half-filling as a generic model to describe the physics of two species of repulsively interacting fermionic cold atoms in optical lattices. We use Dynamical Mean Field Theory to obtain the…

强关联电子 · 物理学 2012-01-11 E. A. Winograd , R. Chitra , M. J. Rozenberg

We study thermodynamic properties of the doped Hubbard model on the square lattice in the regime of strong charge and spin fluctuations at low temperatures near the metal-to-insulator crossover and obtain results with controlled accuracy…

强关联电子 · 物理学 2021-03-17 Connor Lenihan , Aaram J. Kim , Fedor Šimkovic IV. , Evgeny Kozik

The interaction-driven Mott transition in the half-filled Hubbard model is a first-order phase transition that terminates at a critical point $(T_\mathrm{c},U_\mathrm{c})$ in the temperature-interaction plane $T-U$. A number of crossovers…

强关联电子 · 物理学 2020-04-07 A. Reymbaut , M. Boulay , L. Fratino , P. Sémon , Wei Wu , G. Sordi , A. -M. S. Tremblay

More than half a century after first being proposed by Sir Nevill Mott, the deceptively simple question of whether the interaction-driven electronic metal-insulator transition may be continuous remains enigmatic. Recent experiments on…

Using the determinant quantum Monte Carlo method, we investigate the metal-insulator transition in the interacting disordered Hubbard model of a Lieb lattice, in which the system characterizes the flat band centered at the Fermi level. By…

强关联电子 · 物理学 2022-12-06 Yueqi Li , Lingyu Tian , Tianxing Ma , Hai-Qing Lin

We examine the metal-insulator transition in a half-filled Hubbard model of electrons with random and all-to-all hopping and exchange, and an on-site non-random repulsion, the Hubbard $U$. We argue that recent numerical results of Cha et…

强关联电子 · 物理学 2020-05-13 Grigory Tarnopolsky , Chenyuan Li , Darshan G. Joshi , Subir Sachdev

The strong coupling diagram technique is used for investigating states near the metal-insulator transition in the half-filled two-dimensional repulsive Hubbard model. The nonlocal third-order term is included in the irreducible part along…

强关联电子 · 物理学 2018-10-30 A. Sherman

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

We use state-of-the-art numerical techniques to compute ground state correlations in the two-dimensional SU(3) Fermi Hubbard model at $1/3$-filling, modeling fermions with three possible spin flavors moving on a square lattice with an…

We examine the nature of the transition to the antiferromagnetically ordered state in the half-filled three-dimensional Hubbard model using the dual-fermion multiscale approach. Consistent with analytics, in the weak-coupling regime we find…

Using the strong coupling diagram technique, we find three phases of the half-filled isotropic Hubbard model on a triangular lattice at finite temperatures. The weak-interaction ($U\lesssim5t$) and strong-interaction ($U\gtrsim9t$) phases…

强关联电子 · 物理学 2025-04-10 A. Sherman

Using finite-temperature determinantal quantum Monte Carlo simulations, we examine the thermodynamic properties of the extended Hubbard model on the half-filled square lattice in the Slater regime at intermediate coupling. We consider both…

强关联电子 · 物理学 2022-10-19 Alexander Sushchyev , Stefan Wessel
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