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Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses the influence of the gate-drain discharge deviation on the voltage imbalance…

Study of the buck converter and cascaded system considering the voltage mode controller has been done. First the small signal analysis of a buck dc/dc converter is presented and its mathematical representation has been showed. Then, the…

A voltage amplifier, based on the BFU500XRR NPN transistor in a common-emitter configuration, was developed for the readout of the fast output of an ONSEMI MicroFC-10035 Silicon Photomultiplier (SiPM). This amplifier was tested and…

Full Adder is one of the critical parts of logical and arithmetic units. So, presenting a low power full adder cell reduces the power consumption of the entire circuit. Also, using Nano-scale transistors, because of their unique…

We investigate massive multiple-input-multiple output (MIMO) uplink systems with 1-bit analog-to-digital converters (ADCs) on each receiver antenna. Receivers that rely on 1-bit ADC do not need energy-consuming interfaces such as automatic…

Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…

Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nano-scale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we…

The commercialization of transistors capable of both switching and amplification in 1960 resulted in the development of second-generation computers, which resulted in the miniaturization and lightening, while accelerating the reduction and…

A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…

We designed and experimentally demonstrated a four-terminal superconducting device which can function as a non-latching (reversible) superconducting switch from the diode regime to the resistive state by applying a control current much…

The proposed delta-sigma modulator ($\Delta\Sigma$M) based signal acquisition architecture uses a differential difference amplifier (DDA) customized for dual purpose roles, namely as instrumentation amplifier and as integrator of…

Fast-response voltage regulation is essential for data-center Voltage Regulation Modules (VRMs) powering Artificial Intelligence (AI) workloads, which exhibit both small-amplitude fluctuations and abrupt full-load steps. This paper…

Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…

A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…

With their great scalability and flexibility, cascaded-bridge and modular multilevel converters have enabled a variety of energy applications, such as offshore wind power, high-voltage dc power transmission, power-quality management, and…

Due to the increasing popularity of DC loads and the potential for higher efficiency, DC microgrids are gaining significant attention. DC microgrids utilize multiple parallel converters to deliver sufficient power to the load. However, a…

New nanotechnology based devices are replacing CMOS devices to overcome CMOS technology's scaling limitations. However, many such devices exhibit non-monotonic I-V characteristics and uncertain properties which lead to the negative…

A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses…

Superconducting diodes enable dissipationless directional transport, yet achieving electrical tunability and scalability remains a major challenge for circuit-level integration. Here, we demonstrate an electrothermal-switch superconducting…

DC microgrids conform to distributed control of renewable energy sources which ratifies efficacious instantaneous power sharing and sustenance of energy access among different domestic Power Management Units (PMUs) along with maintaining…