相关论文: A 97% Peak Efficiency Single-Inductor-Multiple-Out…

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…

Switched-capacitor (SC) DC-DC voltage converters are widely used in power delivery and management of modern integrated circuits. Connected to a common supply voltage, SC converters exhibit cross-regulation/coupling effects among loads…

This paper proposes a drive train topology with a dynamically reconfigurable dc battery, which breaks hard-wired batteries into smaller subunits. It can rapidly control the output voltage and even contribute to voltage shaping of the…

We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant…

This paper introduces a single-switch high-gain voltage-multiplier coupled quadratic boost converter (HGVM-QBC), developed from the conventional quadratic boost converter (QBC). The proposed topology is designed to achieve higher voltage…

The design and measurement results of ultra-low power, fast 10-bit Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) prototypes in 65 nm CMOS technology are presented. Eight prototype ADCs were designed using two…

With scaling of Vt sub-threshold leakage power is increasing and expected to become significant part of total power consumption In present work three new configurations of level shifters for low power application in 0.35{\mu}m technology…

In this paper, we have proposed a new design technique of BCD Adder using newly constructed reversible gates are based on NMOS with pass transistor gates, where the conventional reversible gates are based on CMOS with transmission gates. We…

An increasing penetration of renewable energy resources, electric vehicle chargers, and energy storage systems into low-voltage power grids causes several power management and stability problems, such as reverse power flow, (local) overload…

A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…

The design of gate drivers is an important topic in power converter topologies that can help reduce switching losses and increase power density. Gate driving techniques that offer zero-voltage switching and/or zero current switching have…

High-voltage direct current (HVDC) is an increasingly commonly used technology for long-distance electric power transmission, mainly due to its low resistive losses. In this paper the voltage-droop method (VDM) is reviewed, and three novel…

In this paper we report on the development of a fast high-voltage switch, which is based on two enhancement mode N-channel Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors in push-pull configuration. The switch is capable…

We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon…

Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…

Motivated by the demand for energy-efficient communication solutions in the next generation cellular network, a mixed-ADC architecture for massive multiple input multiple output (MIMO) systems is proposed, which differs from previous works…

We propose a novel approach for channel state information (CSI) compression in multiple-input multiple-output orthogonal frequency division multiplexing (MIMO-OFDM) systems, where the frequency-domain channel matrix is treated as a…

Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…

Conventional boost converters are essential to connect low-voltage energy source such as battery with high voltage DC bus in Electric Vehicles due to its simple construction and high conversion efficiency. However, large output capacitor…