相关论文: Immediate recapture in the trapping-detrapping pro…
We propose a model of $1/f$ noise in semiconductors based on the drift of individual charge carriers and their interaction with the trapping centers. We assume that the trapping centers are homogeneously distributed in the material. The…
The frequency exponent of 1/f noise in graphene-boron nitride heterostructures is known to have multiple extrema in its dependence on the charge carrier concentration. This behavior is explained in the present paper as a result of the…
A mechanism of $1/f$ noise due to traps formed by impurities which have no neighbors with close energies in their vicinity is studied. Such traps slowly exchange electrons with the rest of conducting media. The concentration of traps and…
A trapping mechanism is observed and proposed as the origin of the anomalous behavior recently discovered in transport properties of overdamped ratchets subject to external oscillatory drive in the presence of quenched noise. In particular,…
Based on analyzing various physical examples for 1/f noise we found that the 1/f noise is caused by generating conditions as resonance in acoustics and the effect of matter carrier is secondary. All the physical reasons are summarized into…
The noise-enhanced trapping is a surprising phenomenon that has already been studied in chaotic scattering problems where the noise affects the physical variables but not the parameters of the system. Following this research, in this work…
With the growing efforts in isolating solid-state qubits from external decoherence sources, the material-inherent sources of noise start to play crucial role. One representative example is electron traps in the device material or substrate.…
Graphene-based devices show $1/f$ low-frequency noise in several electronic transport properties, such as mobility and charge carrier concentration. The recent outburst of experimental studies on graphene-based devices integrated into…
The trap parameters of defects in Si/CaF2 multilayered structures were determined from the analysis of optical charging spectroscopy measurements. Two kinds of maxima were observed. Some of them were rather broad, corresponding to "normal"…
The current noise in a classical one-dimensional charge density wave system is studied in the weak pinning regime by solving the overdamped equation of motion numerically. At low temperatures and just above the zero temperature depinning…
It is generally assumed that stochastic processes exhibiting 1/f noise are affected with the so-called infrared catastrophe. We present an intermittent stochastic process generating 1/f noise which avoids this problem.
Random Telegraph Noise is a ubiquitous process manifesting across technology and the natural world. It is characterized by random jumps between two distinct states with Poissonian waiting times, and is the origin of 1/f noise. Understanding…
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping.…
Low-frequency 1/f-noise occurs at all levels of the nature organization and became an actual factor of nanotechnologies, but in essence it remains misunderstood by its investigators. Here, once again it is pointed out that such the state of…
In this paper it is demonstrated that a 1/f power spectrum appears in the process originated by the superposition of many similar single-sided RTN processes with the same relaxation time. The non-relaxed regime, the Gaussian nature and the…
A trapping-detrapping model is proposed for explaining the current fluctuation behavior in organic semiconductors (polyacenes) operating under current-injection conditions. The fraction of ionized traps obtained from the current-voltage…
Resonance trapping appears in open many-particle quantum systems at high level density when the coupling to the continuum of decay channels reaches a critical strength. Here a reorganization of the system takes place and a separation of…
We propose and study a model of dephasing due to an environment of bistable fluctuators. We apply our analysis to decoherence of Josephson Qubits, induced by background charges present in the substrate, which are also responsible for the…
In quantum computation, quantum coherence must be maintained during gate operation. However, in physical implementations, various couplings with the environment are unavoidable and can lead to a dephasing of a quantum bit(qubit). The…
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for…