相关论文: Ferrimagnetic Heusler tunnel junctions with fast s…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
Following demands for materials with peculiar transport properties, e.g. in magnetoelectronics or thermoelectrics, there is a need for materials modeling at the quantum-mechanical level. We combine density-functional with various…
Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…
Multiferroic tunnel junctions (MFTJs) based on two-dimensional (2D) van der Waals heterostructures with sharp and clean interfaces at the atomic scale are crucial for applications in nanoscale multi-resistive logic memory devices. The…
The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the…
Noncollinear magnets provide essential ingredients for the next generation memory technology. It is a new prospect for the Heusler materials, already well known due to the diverse range of other fundamental characteristics. Here, we present…
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM).…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…
An extensive experimental investigation on the structural, static magnetic, and non-equilibrium dynamical properties of polycrystalline Mn$_2$CuGe Heusler alloy using powder X-ray diffraction, DC magnetization, magnetic relaxation, magnetic…
A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel…
The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these…
We study IrCrMnZ (Z=Al, Ga, Si, Ge) systems using first-principles calculations from the perspective of their application as the electrode materials of MgO-based MTJs. These materials have highly spin-polarized conduction electrons with…
Complex oxides exhibit a variety of unusual physical properties, which can be used for designing novel electronic devices. Here we fabricate and study experimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctions with the…
Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585{\deg}C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were…
Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…