相关论文: Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ m…
The integration of ferroelectric nitride thin films such as Al1-xScxN onto GaN templates could enable enhanced functionality in novel high-power transistors and memory devices. This requires a detailed understanding of the ferroelectric…
Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and low-loss circuits for quantum computing. The current state-of-the-art approach for…
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on…
GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatible with silicon processing standards. These attributes make…
We report the design, fabrication and characterization of evanescent mid-infrared germanium-on-silicon waveguide sensors for therapeutic drug monitoring (TDM). TDM requires rapid and accurate quantification of serum drug levels but existing…
We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were…
Semi-transparent photovoltaic devices for building integrated applications have the potential to provide simultaneous power generation and natural light penetration. CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) has been established as a mature…
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a…
Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long…
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two…
Multijunction solar cells are usually grown on Ge substrates. This implies several disadvantages that hinder the performance of the whole multijunction and limit their possible applications. The drawbacks caused by the substrate are:…
The rapid growth of artificial intelligence (AI) and other data center applications is driving the demand for photonic interconnects that combine high-speed with low energy consumption, making scalability a critical requirement.…
Dielectric resonant metasurfaces can be utilized for efficient high harmonic generation, which has been explored here in this effort for a high-efficient Germanium metasurface for upconverted full-Stokes imaging at 1.33-micron wavelength by…
Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…
Metasurfaces have become one of the most prominent research topics in the field of optics owing to their unprecedented properties and novel applications on an ultrathin platform. By combining graphene with metasurfaces, electrical tunable…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
While silicon has dominated solid-state electronics for more than four decades, a variety of new materials have been introduced into photonics to expand the accessible wavelength range and to improve the performance of photonic devices. For…
Near-infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state-of-the-art NIR sensors made of germanium (Ge) suffer from rather poor…
Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and inter-chip communication links. Particularly, the integration with silicon complementary metal-oxide-semiconductor (CMOS) technology has received…