相关论文: Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ m…
The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der…
We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic…
Graphene photodetectors offer ultrafast response and broadband operation, but their responsivity is typically limited by rapid hot-carrier cooling, leading to a trade-off between sensitivity and speed. Here, we demonstrate that modifying…
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…
For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types…
Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a…
We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique…
Digital camera sensors utilize color filters on photodiodes to achieve color selectivity. As color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…
The combination of graphene with semiconductor materials in heterostructure photodetectors, has enabled amplified detection of femtowatt light signals using micron-scale electronic devices. Presently, the speed of such detectors is limited…
Graphene-based photodetectors, taking advantage of high carrier mobility and broadband absorption in graphene, have recently experienced rapid development. However, their performances with respect to the responsivity and bandwidth are still…
At a coverage of about 1/3 monolayer, Sn deposited on Ge(111) below 550 forms a metastable (sqrt3 x sqrt3)R30 phase. This phase continuously and reversibly transforms into a (3x3) one, upon cooling below 200 K. The photoemission spectra of…
Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great…
A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and…
We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either…
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room…
The development of high-performing sensing materials, able to detect ppb-trace concentrations of volatile organic compounds at low temperatures, is required for the development of next-generation miniaturized wireless sensors. Here, we…
The extraordinary electronic and optical properties of the crystal-to-amorphous transition in phase-change materials led to important developments in memory applications. A promising outlook is offered by nanoscaling such phase-change…
Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits…
The mid-wave (MWIR) spectral range can provide a larger bandwidth for optical sensing and communication when the near-infrared band gets congested. As optical sensing becomes a robust technique for digital imaging and object recognition,…