相关论文: Analytical impact excitation of Er/O/B co-doped Si…
We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…
Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available…
Luminescence in Ce doped materials corresponds to a transition from an excited state where the lowest Ce 5d level is filled to the ground state where a single 4f level is filled. We have performed theoretical calculations based on Density…
The Gamma Factory (GF) initiative aims at the construction of a unique experimental tool exploiting resonant interaction of light with ultra-relativistic partially stripped ions (PSI) stored in circular accelerators at CERN. Resonant…
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the…
Laser diodes based on solution-processable materials could benefit numerous technologies including integrated electronics and photonics, telecommunication, and medical diagnostics. An attractive system for implementing these devices is…
Electron-impact direct double ionization (DDI) process is studied as a sequence of two and three step processes. Contribution from ionization-ionization, ionization-excitation-ionization, and excitation-ionization-ionization processes is…
Emission and absorption features from C-like ions serve as temperature and density diagnostics of astrophysical plasmas. $R$-matrix electron-impact excitation data sets for C-like ions in the literature merely cover a few ions, and often…
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using…
Electron--impact excitation of Xe atoms in pure Xe gas and in a Xe(10 %)--Ar(90 %) mixture has led to the discovery of infrared (IR) luminescence of Xe$_{2}$ excimers. The investigation of the emission spectrum at low gas density has…
High energy electron irradiation is used to controllably introduce atomic-scale point defects into single crystalline Ba(Fe_1-xCo_x)_2As_2, Ba(Fe_1-xNi_x)_2As_2, and BaFe_2(As_1-xP_x)_2. The appearance of the collective pinning contribution…
Absolute cross sections for electron-impact single ionisation (EISI) of multiply charged tungsten ions (W$^{q+}$) with charge states in the range $ 11 \leq q \leq 18$ in the electron-ion collision energy ranges from below the respective…
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and…
R-matrix calculations combined with the adiabatic-nuclei-rotation and Coulomb-Born approximations are used to compute electron-impact rotational rate coefficients for two open-shell diatomic cations of astrophysical interest: the hydoxyl…
The analysis of all published results on electrons and holes impact ionization coefficients in 4H-SiC at 300K have been performed. It is shown that the most plausible approximation of dependencies $\alpha_{n,p}$ on the electric field…
Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based quantum repeaters. We have recently developed a non-invasive…
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket…
Using the density matrix theory of interaction between light and matter, and relevant parameters of the relaxation rates for a six-level model, we have shown theoretically the possibility of realizing Electromagnetically Induced…
We have fabricated light emitting diodes (LEDs) with Schottky contacts on Si-nanocrystals formed by simple techniques as used for standard Si devices. Orange electroluminescence (EL) from these LEDs could be seen with the naked eye at room…
Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18…