相关论文: Spin-Dependent Capture Mechanism for Magnetic Fiel…
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…
The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pumping has enabled the investigation of these dynamically injected currents…
Continuous-wave optically detected magnetic resonance (CW-ODMR) measurements with nitrogen-vacancy (NV) spins in diamond are used for sensing DC magnetic fields from nearby magnetic targets. However, this technique suffers from ambiguities…
We study the zero-bias magnetoresistance MR of an interacting quantum dot connected to two ferromagnetic leads and capacitively coupled to a gate voltage source Vg. We investigate the effects of the spin-activity of the contacts between the…
An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…
We present a methodology for probing the details of electronic susceptibility through minimally-invasive nuclear magnetic resonance techniques. Specifically, we classify electron-mediated long-range interactions in an ensemble of nuclear…
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather…
We study the three-dimensional antiferromagnetic Ising model in both uniform longitudinal ($H$) and transverse ($\Omega $) magnetic fields by using the effective-field theory with finite cluster $N=1$ spin (EFT-1). We analyzed the behavior…
Control of magnetism by an applied electric field is a desirable technique for the functionalization of magnetic materials. Motivated by recent experiments, we study the electric field control of the interfacial magnetism of…
The surface of a topological insulator hosts a very special form of a quasi-two dimensional metallic system when it is embedded in a topologically trivial medium like the vacuum. The electronic properties of this unusual 2D metal are…
We extend the well known phenomenon of magnetoresistance (extra resistivity of materials in transverse magnetic field) to a new and unexplored regime where in addition to a transverse magnetic field, a transverse AC field of resonant…
Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite…
Experiments searching for exotic spin-dependent interactions typically employ magnetic shielding between the source of the exotic field and the interrogated spins. We explore the question of what effect magnetic shielding has on detectable…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
The effect of a Zeeman magnetic field coupled to the spin of the electrons on the conducting properties of the disordered Hubbard model is studied. Using the Determinant Quantum Monte Carlo method, the temperature- and magnetic-field-…
Spin injection and detection are very sensitive to the interface properties between ferromagnet and semiconductor. Because the interface properties such as a tunneling resistance can be chosen independently between the injection and…
Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of…
Electrically detected magnetic resonance (EDMR) is applied to mm size devices with implanted leads and a 50 micron square gap laid down on bulk phosphorus doped silicon. Devices with a range of phosphorus concentrations and surface types…
Magnetoelectric (ME) magnetic field sensors commonly rely on one of the two modulation principles: the nonlinear dependence of magnetostrictive strain on the applied field or the stress-induced change in magnetization susceptibility. While…
Van der Waals heterostructures combining two-dimensional magnetic and semiconducting layers constitute a promising platform for interfacing magnetism, electronics, and optics. Here, we use resonant optical reflection spectroscopy to the…