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相关论文: Electronic band structure of Sb2Te3

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We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future…

Tensile strained bulk HgTe is a three-dimensional topological insulator. Because of the energetic position of its surface state Dirac points relative to its small bulk gap, the electronic properties of the relatively thin MBE-grown films…

介观与纳米尺度物理 · 物理学 2018-04-06 Jihang Zhu , Chao Lei , Allan H. MacDonald

We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $\delta$-layers. We show that, in spite of the known challenges in producing highly confined Sb $\delta$-layers, sufficient…

We present a symmetry-based calculation of the electronic structure of a compound semiconductor quantum dot (QD) in the sp^3s* tight-binding model including the spin-orbit interaction. The Hamiltonian matrix is diagonalized exactly for CdTe…

介观与纳米尺度物理 · 物理学 2009-10-31 J. Perez-Conde , A. K. Bhattacharjee

The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in…

We have performed angle-resolved photoemission spectroscopy on (PbSe)5(Bi2Se3)3m, which forms a natural multilayer heterostructure consisting of a topological insulator (TI) and an ordinary insulator. For m = 2, we observed a gapped…

介观与纳米尺度物理 · 物理学 2015-06-05 K. Nakayama , K. Eto , Y. Tanaka , T. Sato , S. Souma , T. Takahashi , Kouji Segawa , Yoichi Ando

Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous (a)-LaAlO$_3$/KTaO$_3$…

材料科学 · 物理学 2021-09-15 Km Rubi , Shengwei Zeng , Femke Bangma , Michel Goiran , A. Ariando , Walter Escoffier , Uli Zeitler

In this communication, we report a theoretical attempt to understand the involvement of electronic structure in determination of optical and thermal properties of C$_{17}$Ge germagraphene, a buckled two dimensional material. The structure…

材料科学 · 物理学 2020-05-08 Sujoy Datta , Debnarayan Jana

Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric…

Anti-ThCr$_2$Si$_2$ type $RE_2$O$_2$Sb ($RE$ = rare earth) with Sb square net has shown insulating conduction so far. Here we report the synthesis of La$_2$O$_2$Sb epitaxial thin films for the first time by multilayer solid-phase epitaxy.…

材料科学 · 物理学 2021-06-10 Yuki Yamamoto , Hideyuki Kawasoko , Tomoteru Fukumura

Density functional calculations have performed to study the band structures of $Bi_2Te_3$-related binary ($Bi_2Te_3$, $Sb_2Te_3$, $Bi_2Se_3$, and $Sb_2Se_3$) and $Sb$/$Se$ doped ternary compounds [$(Bi_{1-x}Sb_x)_2Te_3$ and…

材料科学 · 物理学 2016-11-16 Byungki Ryu , Min-Wook Oh , Bong-Seo Kim , Ji Eun Lee , Sung-Jae Joo , Bok-Ki Min , HeeWoong Lee , Sudong Park

We report a theoretical study of electron spin resonance in bulk topological insulators, such as Bi2Se3, Bi2Te3 and Sb2Te3. Using the effective four-band model, we find the electron energy spectrum in a static magnetic field and determine…

材料科学 · 物理学 2016-04-20 O. Ly , D. M. Basko

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3…

介观与纳米尺度物理 · 物理学 2015-11-12 Weiguang Ye , A. B. Pakhomov , Shuigang Xu , Huanhuan Lu , Zefei Wu , Yu Han , Tianyi Han , Yingying Wu , Gen Long , Jiangxiazi Lin , Gu Xu , Yuan Cai , Lu-Tao Weng , Ning Wang

Electron paramagnetic resonance was used to investigate Mn impurity in Bi$_2$Se$_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn$^2$$^+$ configuration, was detected regardless of the conductivity…

We report electrical (angular magneto-resistance, and Hall), thermal (heat capacity) and spectroscopic (Raman, x-ray photo electron, angle resolved photo electron) characterization of bulk Bi2Se3 topological insulator, which is being is…

We present an analysis of bulk and surface electronic structures of thallium based ternary III-V-VI$_2$ series of compounds TlMQ$_2$, where M=Bi or Sb and Q=S, Se or Te, using the ab initio density functional theory framework. Based on…

介观与纳米尺度物理 · 物理学 2012-09-27 Bahadur Singh , Ashutosh Sharma , H. Lin , M. Z. Hasan , R. Prasad , A. Bansil

We have performed broad-band zero-field and magneto-infrared spectroscopy of the three dimensional topological insulator Bi$_{0.91}$Sb$_{0.09}$. The zero-field results allow us to measure the value of the direct band gap between the…

介观与纳米尺度物理 · 物理学 2015-06-04 A. A. Schafgans , A. A. Taskin , Yoichi Ando , Xiao-Liang Qi , B. C. Chapler , K. W. Post , D. N. Basov

Layer-dependent electronic and structural properties of emerging graphitic carbon boron compound C3B are investigated using both density functional theory and the GW approximation. We discover that, in contrast to a moderate quasiparticle…

材料科学 · 物理学 2020-07-29 Yabei Wu , Weiyi Xia , Yubo Zhang , Wenguang Zhu , Wenqing Zhang , Peihong Zhang

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized…

介观与纳米尺度物理 · 物理学 2015-03-03 Fucong Fei , Qianjin Wang , Zhongxia Wei , Rui Wang , Danfeng Pan , Bo Zhao , Xuefeng Wang , Xinran Wang , Fengqi Song , Baigeng Wang , Jianguo Wan , Guanghou Wang

The interface between a superconductor and a topological insulator has been proposed to harbor novel quasiparticles that realize physical schemes for fault-tolerant quantum computation. Here, we present high resolution angle-resolved…

介观与纳米尺度物理 · 物理学 2009-10-08 Y. Xia , L. Wray , D. Qian , D. Hsieh , A. Pal , H. Lin , A. Bansil , D. Grauer , Y. S. Hor , R. J. Cava , M. Z. Hasan