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Diamond is studied by path integral molecular dynamics simulations of the atomic nuclei in combination with a tight-binding Hamiltonian to describe its electronic structure and total energy. This approach allows us to quantify the influence…

材料科学 · 物理学 2009-11-11 Rafael Ramirez , Carlos P. Herrero , Eduardo R. Hernandez

Layered transition-metal chalcogenides (Zr,Hf)GeTe$_{4}$ were screened out from database of Atomwork as a candidate for pressure-induced superconductivity due to their narrow band gap and high density of state near the Fermi level. The…

Diamond is a proven solid-state platform for spin-based quantum technology. The nitrogen-vacancy (NV) center in diamond has been used to realize small-scale quantum information processing (QIP) and quantum sensing under ambient conditions.…

A MEMS-based sensing device is used to measure the normal and tangential stress fields at the base of a rough elastomer film in contact with a smooth glass cylinder in steady sliding. This geometry allows for a direct comparison between the…

软凝聚态物质 · 物理学 2009-11-15 Julien Scheibert , Alexis Prevost , Georges Debrégeas , Eytan Katzav , Mohktar Adda-Bedia

In the present paper, experimental and numerical studies of interaction between different liquid droplets with different hot metal surfaces had been carried out and the obtained results were interpreted using graphs and pictures. Droplet…

流体动力学 · 物理学 2022-08-23 Subhasish Guchhait , Pratim Kumar

Nuclear spins are among the potential candidates prospected for quantum information technology. A recent breakthrough enabled to atomically resolve their interaction with the electron spin, the so-called hyperfine interaction, within…

介观与纳米尺度物理 · 物理学 2021-06-09 Sufyan Shehada , Manuel dos Santos Dias , Filipe Souza Mendes Guimarães , Muayad Abusaa , Samir Lounis

Although in-situ transmission electron microscopy (TEM) of nanomaterials has been gaining importance in recent years, difficulties in sample preparation have limited the number of studies on electrical properties. Here, a support-based…

介观与纳米尺度物理 · 物理学 2024-03-14 Simon Hettler , Mohammad Furqan , Raul Arenal

We introduce a class of simple models for shear thickening and/ or `jamming' in colloidal suspensions. These are based on schematic mode coupling theory (MCT) of the glass transition, having a memory term that depends on a density variable,…

软凝聚态物质 · 物理学 2015-06-24 C B Holmes , M E Cates , M Fuchs , P Sollich

Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic…

Multiterminal measurements have typically been employed to examine electronic properties of strongly correlated electronic materials such as transition metal oxides without the influence of contact effects. In contrast, in this work we…

强关联电子 · 物理学 2010-12-01 A. A. Fursina , R. G. S. Sofin , I. V. Shvets , D. Natelson

We report on the transient frictional response of contacts between a rigid spherical glass probe and a micrometer-thick poly(dimethylacrylamide) hydrogel film grafted onto a glass substrate when a lateral relative motion is applied to the…

软凝聚态物质 · 物理学 2020-07-01 Lola Ciapa , Jessica Delavoipi\ère , Yvette Tran , Emilie Verneuil , Antoine Chateauminois

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten…

材料科学 · 物理学 2017-11-22 Nicolas Onofrio , David Guzman , Alejandro Strachan

Tribological properties of materials play an important role in engineering applications. Up to now, a number of experimental studies have identified correlations between tribological parameters and the mechanical response. Using molecular…

计算物理 · 物理学 2019-08-30 Karina E. Avila , Stefan Küchemann , Iyad Alabd Alhafez , Herbert M. Urbassek

Inspired by some recent molecular dynamics (MD) simulations and experiments on suspended graphene nanoribbons, we study a simplified model where the atoms are disposed in a rectangular lattice coupled by nearest neighbor interactions which…

介观与纳米尺度物理 · 物理学 2015-10-20 R. Barreto , M. F. Carusela , A. Mancardo Viotti , A. G. Monastra

To develop next-generation electronics and high efficiency energy-harvesting devices, it is crucial to understand how charge and heat are transported at the nanoscale. Metallic atomic-size contacts are ideal systems to probe the quantum…

介观与纳米尺度物理 · 物理学 2019-05-01 Nico Mosso , Alyssa Prasmusinto , Andrea Gemma , Ute Drechsler , Lukas Novotny , Bernd Gotsmann

The kinetic friction and wear at high sliding speeds is investigated using the head-disk interface of hard disk drives, wherein, the head and the disk are less than 10 nm apart and move at sliding speeds of 5-10 m/s relative to each other.…

介观与纳米尺度物理 · 物理学 2016-05-10 Sukumar Rajauria , Sripathi V. Canchi , Erhard Schreck , Bruno Marchon

Nitrogen vacancy (NV) centres in diamond are attractive as quantum sensors owing to their superb coherence under ambient conditions. However, the NV centre spin resonances are relatively insensitive to some important parameters such as…

The pressure-driven insulator-metal transition is a crucial topic in condensed matter physics. However, even for the prototypical strongly correlated system, NiO, the critical pressure for transition remains debated. In this work, we…

强关联电子 · 物理学 2025-05-30 Bei-Lei Liu , Yue-Chao Wang , Yuan-Ji Xu , Xingyu Gao , Hai-Feng Liu , Hai-Feng Song

The way metal interfaces evolve during frictional sliding, and how that evolution can be externally influenced under external drivers are important questions, hard to investigate experimentally because the contacts themselves are generally…

材料科学 · 物理学 2023-12-29 Ali Khosravi , Jin Wang , Andrea Silva , Andrea Vanossi , Erio Tosatti

Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Injection of charge carriers across such interfaces is mostly…