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By taking the virtual inter-band transitions along with the intra-band ones into full account, here we first propose an effective band mass theorem that is suitable for a wide-class of single-particle Hamiltonians exhibiting multiple energy…

量子气体 · 物理学 2019-05-08 M. Iskin

The interplay of charge, spin, lattice, and orbital degrees of freedom leads to a wide range of emergent phenomena in strongly correlated systems. In heterobilayer transition metal dichalcogenide moir\'e systems, recent observations of Mott…

The optical conductivity of MgB$_2$ has been determined on a dense polycrystalline sample in the spectral range 6 meV - 4.6 eV using a combination of ellipsometric and normal incidence reflectivity measurements. $\sigma_{1}(\omega)$…

We describe the low-temperature optical conductivity as a function of frequency for a quantum-mechanical system of electrons that hop along a polymer chain. To this end, we invoke the Su-Schrieffer-Heeger \emph{tight-binding} Hamiltonian…

数学物理 · 物理学 2022-09-28 Dionisios Margetis , Alexander B. Watson , Mitchell Luskin

We compare the classification of the electron bands in graphene, obtained by group theory algebra in the framework of tight-binding model (TBM), with that calculated in the density-functional theory (DFT) framework. Identification in the…

介观与纳米尺度物理 · 物理学 2014-05-01 E. Kogan , V. U. Nazarov , V. M. Silkin , M. Kaveh

Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model…

材料科学 · 物理学 2016-11-15 J. A. Silva-Guillén , P. San-Jose , R. Roldán

The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates rigorous understanding of its optoelectronic properties. Theoretical predictions of a "pseudo-direct" band gap, characterized…

材料科学 · 物理学 2024-12-17 Christopher A. Broderick , Xie Zhang , Mark E. Turiansky , Chris G. Van de Walle

Tuning the electronic structures of two-dimensional (2D) material-based heterostructures is of crucial importance for their use in functional next-generation electronics. Here, through angle-resolved photoemission spectroscopy with…

The ground state (GS) properties of the quasi-one-dimensional $AB_2$ Hubbard model are investigated taking the effects of charge and spin quantum fluctuations on equal footing. In the strong-coupling regime, we derive a low-energy…

强关联电子 · 物理学 2018-12-17 V. M. Martinez Alvarez , M. D. Coutinho-Filho

The electronic band structure of V$_2$O$_5$ is calculated using an all-electron quasiparticle self-consistent (QS) $GW$ method, including electron-hole ladder diagrams in the screening of $W$. The optical dielectric function calculated with…

材料科学 · 物理学 2024-07-31 Claudio Garcia , Santosh Kumar Radha , Swagata Acharya , Walter R. L. Lambrecht

We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation of subband-edge g factors between…

介观与纳米尺度物理 · 物理学 2009-04-29 D. Csontos , P. Brusheim , U. Zuelicke , H. Q. Xu

We use density functional theory to calculate the electronic band structures, cohesive energies, phonon dispersions, and optical absorption spectra of two-dimensional In$_2$X$_2$ crystals, where X is S, Se, or Te. We identify two…

介观与纳米尺度物理 · 物理学 2014-09-19 V. Zolyomi , N. D. Drummond , V. I. Fal'ko

We investigate the electronic band structure of modulation-doped GaAs/AlGaAs core-shell nanowires for both n- and p-doping. We developed an 8-band Burt-Foreman k.p Hamiltonian approach to describe coupled conduction and valence bands in…

介观与纳米尺度物理 · 物理学 2022-06-13 Andrea Vezzosi , Andrea Bertoni , Guido Goldoni

We have developed an 8-band Effective Mass Approximation model that describes the zero field spin splitting in the band structure of zincblende heterostructures due to bulk inversion asymmetry (BIA). We have verified that our finite…

介观与纳米尺度物理 · 物理学 2007-05-23 X. Cartoixa , D. Z. -Y. Ting , T. C. McGill

We develop an atomistic, nearest-neighbor sp3s* tight-binding Hamiltonian to investigate the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model we calculate that the incorporation of dilute concentrations of Bi…

材料科学 · 物理学 2011-12-12 Muhammad Usman , Christopher A. Broderick , Andrew Lindsay , Eoin P. O'Reilly

In the analysis of the heavy electron systems, theoretical models with c-f hybridization gap are often used. We point out that such a gap does not exist and the simple picture with the hybridization gap is misleading in the metallic…

强关联电子 · 物理学 2008-01-08 Hiroyuki Kuroiwa , Yoshiki Imai , Tetsuro Saso

In a Dirac semimetal, the conduction and valence bands contact only at discrete (Dirac) points in the Brillouin zone (BZ) and disperse linearly in all directions around these critical points. Including spin, the low energy effective theory…

介观与纳米尺度物理 · 物理学 2012-04-17 S. M. Young , S. Zaheer , J. C. Y. Teo , C. L. Kane , E. J. Mele , A. M. Rappe

It is difficult to intuit how electronic structure features$-$such as band gap magnitude, location of band extrema, effective masses, etc.$-$arise from the underlying crystal chemistry of a material. Here we present a strategy to distill…

材料科学 · 物理学 2024-12-25 Emily Oliphant , Veda Mantena , Madison Brod , G. Jeffrey Snyder , Wenhao Sun

Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to…

We present a polarization and topology resolved study of the low energy band structure in optimally doped superconducting Ba0.6K0.4Fe2As2 using angle resolved photoemission spectroscopy. Polarization-contrasted measurements allow us to…

强关联电子 · 物理学 2009-12-31 L. A. Wray , D. Hsieh , Y. Xia , S. -Y. Xu , D. Qian , G. F. Chen , J. L. Luo , N. L. Wang , M. Z. Hasan