相关论文: Identifying and abating copper foil impurities to …
Intervalley charged-impurity scattering processes are examined. It is found that the scattering probability is enhanced due to the Coulomb interaction with the impurity by the Sommerfield factor $F_Z\propto \epsilon^{2\sqrt{1-4g^2}-2}$,…
An atomic-scale study utilizing scanning tunneling microscopy (STM) in ultrahigh vacuum (UHV) is performed on large single crystalline graphene grains synthesized on Cu foil by a chemical vapor deposition (CVD) method. After thermal…
Monovalent impurities on graphene can be divided into ionically and covalently bond impurities. The covalent impurities cause universal midgap states as the carbon atom next to the impurity is effectively decoupled from the graphene…
Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene…
We evaluate the autocorrelation function of the electrostatic potential in doped graphene due to nearby charged impurities. The screening of those impurities is described by a combination of the polarization function for graphene in random…
We synthesize large-area graphene via atmospheric-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure (LP) CVD on copper, optical contrast and atomic force microscopy…
This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The…
Synthesis of multilayer graphene on copper wires by a chemical vapor deposition method is reported. After copper etching, the multilayer tube collapses forming stripes of graphitic films, their electrical conductance as a function of…
The catalyst-free synthesis of graphene on dielectrics prevents the damage induced by the transfer process. Although challenging, to master this synthesis would boost the integration of graphene on consumer electronics since defects hinder…
In order to explain the origin of the deep red color of copper glazes on ceramics, a ceramist has elaborated, by firing under reducing atmosphere, a significant number of tiles. The analysis of the structure and composition of a…
A bottom-up chemical vapor deposition (CVD) process for the growth of graphene nanomesh films is demonstrated. The process relies on silicon nanospheres to block nucleation sites for graphene CVD on copper substrates. These spheres are…
Applying time-dependent photoemission we unravel the graphene growth process on a metallic surface by chemical vapor deposition (CVD). Graphene CVD growth is in stark contrast to the standard growth process of two--dimensional films because…
The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on…
Atomically resolved imaging and spectroscopic characteristics of graphene grown by chemical vapor deposition (CVD) on copper are investigated by means of scanning tunneling microscopy and spectroscopy (STM/STS). For CVD-grown graphene…
Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements,…
By systematically studying the proton selectivity of free-standing graphene membranes in aqueous solutions we demonstrate that protons are transported by passing through defects. We study the current-voltage characteristics of single-layer…
Chemical vapor deposition (CVD) has been widely adopted as the most scalable method to obtain single layer graphene. Incorporating CVD graphene in planar devices can be performed via well established wet transfer methods or thermal adhesive…
In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in…
Understanding the competition between first-layer lateral expansion and second-layer nucleation is essential for layer-controlled graphene growth via chemical vapor deposition (CVD). Building on our previous phase diagram framework based on…
We consider the problem of screening of an electrically charged impurity in a clean graphene sheet. When electron-electron interactions are neglected, the screening charge has a sign opposite to that of the impurity, and is localized near…