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The effects of the long range electrostatic interaction in twisted bilayer graphene are described using the Hartree-Fock approximation. The results show a significant dependence of the band widths and shapes on electron filling, and the…

介观与纳米尺度物理 · 物理学 2022-07-29 Tommaso Cea , Pierre A. Pantaleón , Niels R. Walet , Francisco Guinea

We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only…

介观与纳米尺度物理 · 物理学 2013-02-18 Dongwei Xu , Haiwen Liu , Vincent Sacksteder , Juntao Song , Hua Jiang , Qing-feng Sun , X. C. Xie

Superlattice potentials are theoretically predicted to modify the single-particle electronic structures. The resulting Coulomb-interaction-dominated low-energy physics would generate highly novel many-body phenomena. Here, by in situ…

介观与纳米尺度物理 · 物理学 2022-06-22 Chaofei Liu , Jian Wang

Bilayer graphene twisted at the angle of about 1.1{\deg} better known as magic angle, exhibits ultra-flat moir\'e superlattice bands that are a source of highly-tunable, exotic quantum phenomena. Such phenomena, like superconductivity,…

强关联电子 · 物理学 2024-11-05 Giovanna Feraco , Wissem Boubaker , Petra Rudolf , Antonija Grubišić-Čabo

Bilayer graphene is normally a semimetal with parabolic dispersion, but a tunable bandgap up to few hundreds meV can be opened by breaking the symmetry between the layers through an external potential. Ab-initio calculations show that the…

介观与纳米尺度物理 · 物理学 2015-09-30 Simone De Liberato

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized…

介观与纳米尺度物理 · 物理学 2009-03-10 F. Molitor , A. Jacobsen , C. Stampfer , J. Guettinger , T. Ihn , K. Ensslin

This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…

介观与纳米尺度物理 · 物理学 2012-05-28 Maxim Trushin

Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation of the peak intensity as a function of the applied gate…

强关联电子 · 物理学 2010-07-26 E. Cappelluti , L. Benfatto , A. B. Kuzmenko

We show the possibility of inducing an edge charge current by applying time-dependent strain in gapped graphene samples preserving time reversal symmetry. We demonstrate that this edge current has the same origin as the valley Hall response…

介观与纳米尺度物理 · 物理学 2015-05-28 Abolhassan Vaezi , Nima Abedpour , Reza Asgari , Alberto Cortijo , María A. H. Vozmediano

We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result…

介观与纳米尺度物理 · 物理学 2013-05-29 Tomas Lofwander , Pablo San-Jose , Elsa Prada

Using first-principles methods, we show that an applied perpendicular electric field $E$ breaks the inversion symmetry of AB-stacked bilayer graphene (BLG), thereby slightly mixing the two in-plane high-energy optical vibrations ($E_g$ and…

介观与纳米尺度物理 · 物理学 2015-06-15 R. Stein , D. Hughes , Jia-An Yan

We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance…

介观与纳米尺度物理 · 物理学 2020-07-30 Hadi Z. Olyaei , Bruno Amorim , Pedro Ribeiro , Eduardo V. Castro

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…

We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its…

Gated heterostructures containing bilayer graphene with staggered sublattice potentials are investigated by tight binding model with Rashba spin-orbital coupling and Hubbard interaction. The topological phase diagrams depend on the…

介观与纳米尺度物理 · 物理学 2018-09-05 Ma Luo , Zhibing Li

The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate…

介观与纳米尺度物理 · 物理学 2015-11-16 I. V. Zagorodnev , Zh. A. Devizorova , V. V. Enaldiev

In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…

介观与纳米尺度物理 · 物理学 2012-06-07 D. L. Mafra , P. Gava , L. M. Malard , R. S. Borges , G. G. Silva , J. A. Leon , F. Plentz , F. Mauri , M. A. Pimenta

In this paper, the control of the edge-mode spectrum of integer-Hall-effect 2D waveguides by electric field is proposed and modeled with the effective mass approach. Under certain found conditions, the applied transversal electric field…

介观与纳米尺度物理 · 物理学 2019-03-04 Guennadi A. Kouzaev

We show that the twisted graphene bilayer can reveal unusual topological properties at low energies, as a consequence of a Dirac-point splitting. These features rely on a symmetry analysis of the electron hopping between the two layers of…

介观与纳米尺度物理 · 物理学 2011-07-21 R. de Gail , M. O. Goerbig , F. Guinea , G. Montambaux , A. H. Castro Neto

We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge…